# US 2018/0025899 A1 · Back-side friction reduction of a substrate > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2018/0025899 A1 - Document ID: US20180025899A1 - Status: Published application - Kind: A1 - Application number: 15/650,352 - Filed: 2017-07-14 - Published: 2018-01-25 - Earliest claimed: 2016-07-21 - Assignees: Tokyo Electron Limited - Applicants: Tokyo Electron Limited - Inventors: Hoyoung KANG - Web page: https://patentgrep.com/patent/US20180025899A1 ## CPC - H10P 90/124: {by processing the backside of the wafers} - G03F 7/092: {characterised by backside coating or layers, by lubricating-slip layers or means, by oxygen barrier layers or by stripping-release layers or means} - G03F 7/167: {from the gas phase, by plasma deposition (G03F7/2035 takes precedence)} - G03F 7/42: Stripping or agents therefor - G03F 7/427: {using plasma means only} - H10P 50/00: Etching of wafers, substrates or parts of devices - H10P 72/0464: {characterised by the construction of the transfer chamber} - H10P 72/0468: {comprising a chamber adapted to a particular process} - H10P 72/76: using mechanical means, e.g. clamps or pinches - H10P 74/203: {Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects} - H10P 74/23: {characterised by multiple measurements, corrections, marking or sorting processes} - H10P 76/2041: {Photolithographic processes} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) ## Abstract A processing chamber system includes a substrate mounting module configured to secure a substrate within a first processing chamber. The system also includes a first deposition module configured to apply a light-sensitive film to a front side surface of the substrate, and a second deposition module configured to apply a film layer to a backside surface of the substrate. The front side surface is opposite to the backside surface of the substrate. A substrate has a bare backside surface with a first coefficient of friction. A film layer is formed onto the backside surface of the substrate. The film layer formed on the backside surface of the substrate has a second coefficient of friction. The second coefficient of friction is lower than the first coefficient of friction. ## Claims ### Claim 1 A method of treating a substrate, the method comprising: receiving the substrate into a substrate processing chamber, the substrate having a front side surface and a backside surface opposite to the front side surface; forming a film layer on the backside surface of the substrate; forming a photoresist layer on the front side surface of the substrate; developing the photoresist layer; and removing the film layer from the backside surface of the substrate. ### Claim 2 (depends on 1) The method of claim 1, wherein the backside surface of the substrate has a first coefficient of friction prior to forming the film layer, the film layer formed on the backside surface of the substrate has a second coefficient of friction, and the second coefficient of friction is lower than the first coefficient of friction. ### Claim 3 (depends on 1) The method of claim 1, wherein the film layer comprises a fluorochemical layer. ### Claim 4 (depends on 3) The method of claim 3, wherein the fluorochemical layer comprises one of perfluorodecyltrichlorosilane, perfluorocthylrichlorosilane, perfluorheptachlorosilane, perfluorobuthylchlorosilane, perfluoroooctyltriethoxysilane, perfluorodecyltriethoxysilane, perfluoroooctyltrimethoxysilane, or perfluorodecyltrimethoxysilane. ### Claim 5 (depends on 1) The method of claim 1, wherein the forming a film layer comprises: exposing the backside surface to a fluorine-containing liquid or gas; and exposing the front side surface to a gas maintained at a higher pressure than the fluorine-containing gas or liquid. ### Claim 6 (depends on 1) The method of claim 1, wherein the forming a film layer comprises molecular vapor deposition or molecular liquid deposition. ### Claim 7 (depends on 1) The method of claim 1, wherein the removing a film layer comprises one of exposing the film layer to an oxygen-containing gas, exposing the film layer to an oxygen-containing plasma, or exposing the film layer to a combination of an oxygen-containing gas and ultra-violet light. ### Claim 8 (depends on 1) The method of claim 1, further comprising: exposing the backside surface to a chemistry treatment prior to the forming a film layer on the backside surface, wherein the chemistry treatment includes one of water, monoatomic oxygen, diatomic oxygen, or triatomic oxygen. ### Claim 9 (depends on 1) The method of claim 1, further comprising: securing the substrate to a substrate chuck after forming the film layer onto the backside surface of the substrate, wherein a first measured coefficient of friction of the substrate prior to forming the film layer on the backside surface is greater than a second measured coefficient of friction of the substrate after the film layer is formed on the backside surface. ### Claim 10 (depends on 9) The method of claim 9, wherein a first bowing of the substrate having the film layer adhered to the backside surface of the substrate is less than a second bowing of the substrate without the film layer adhered to the backside surface when the substrate is secured to a chuck during the first bowing and the second bowing. ### Claim 11 (depends on 9) The method of claim 9, wherein a first distortion of the substrate having the film layer adhered to the backside surface of the substrate is less than a second distortion of the substrate without the film layer adhered to the backside surface when the substrate is secured to a chuck during the first distortion and the second distortion. ### Claim 12 (depends on 1) The method of claim 1, wherein developing the photoresist layer occurs subsequent to exposure of the photoresist layer to a pattern of actinic radiation, and wherein the film layer on the backside surface of the substrate is formed prior to the exposure of the photoresist layer to the pattern of actinic radiation. ### Claim 13 A substrate comprising: a substrate having a front side surface and a backside surface opposite to the front side surface, wherein a bare backside surface of the substrate has a first coefficient of friction; and a film layer formed onto the backside surface of the substrate, wherein the film layer formed on the backside surface of the substrate has a second coefficient of friction and the second coefficient of friction is lower than the first coefficient of friction. ### Claim 14 (depends on 13) The substrate of claim 13, wherein a first measured distortion of the substrate having the bare backside surface is greater than a second measured distortion of the substrate with the film layer formed on the backside surface when the substrate is secured to a substrate chuck during the first measured distortion and the second measured distortion. ### Claim 15 (depends on 13) The substrate of claim 13, wherein the film layer comprises one of perfluorodecyltrichlorosilane, perfluorocthylrichlorosilane, perfluorheptachlorosilane, perfluorobuthylchlorosilane, perfluoroooctyltriethoxysilane, perfluorodecyltriethoxysilane, perfluoroooctyltrimethoxysilane, or perfluorodecyltrimethoxysilane. ### Claim 16 A processing chamber system, comprising: a substrate mounting module configured to secure a substrate within a first processing chamber; a first deposition module configured to apply a light-sensitive film to a front side surface of the substrate; and a second deposition module configured to apply a film layer to a backside surface of the substrate, wherein the front side surface is opposite to the backside surface of the substrate. ### Claim 17 (depends on 16) The processing chamber system of claim 16, further comprising: a substrate handler configured to transfer the substrate to one or more subsequent processing chambers; an etch module configured to remove the film layer applied to the bottom surface of the substrate; and a developing module configured to develop the light-sensitive film applied to the top surface of the substrate. ### Claim 18 (depends on 16) The processing chamber system of claim 16, wherein the first processing chamber is configured to expose the backside surface to a first process gas maintained at a first pressure and expose the front side surface to a second process gas being maintained at a second pressure, and the second pressure differs from the first pressure. ### Claim 19 (depends on 16) The processing chamber system of claim 16, wherein the first processing chamber is configured to deposit the first process gas to the backside surface in one of a molecular vapor deposition process or a molecular liquid deposition process. ### Claim 20 (depends on 16) The processing chamber system of claim 16, further comprising: a pre-treatment processing chamber configured to expose the backside surface of the substrate to an oxygen-containing treatment chemistry prior to applying the film layer; and a post-treatment processing chamber configured to remove the film layer from the substrate, wherein the post-treatment processing chamber is further configured to remove the film layer via exposure to one of an oxygen-containing gas, an oxygen-containing plasma, or a combination of an oxygen-containing gas and ultra-violet light.