# US 2018/0025897 A1 · Systems and approaches for semiconductor metrology and surface analysis using secondary ion mass spectrometry

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- Number: US 2018/0025897 A1
- Document ID: US20180025897A1
- Status: Published application
- Kind: A1
- Application number: 15/550,014
- Filed: 2016-02-10
- Published: 2018-01-25
- Earliest claimed: 2015-02-10
- Assignees: Nova Measuring Instruments Ltd.
- Applicants: Revera, Incorporated
- Inventors: David A. REED; Bruno W SCHUELER; Bruce H NEWCOME; Rodney SMEDT; Chris BEVIS
- Web page: https://patentgrep.com/patent/US20180025897A1

## CPC

- H01J 49/142: {using a solid target which is not previously vapourised}
- G01N 23/22: by measuring secondary emission from the material
- G01N 23/2258: Measuring secondary ion emission, e.g. secondary ion mass spectrometry [SIMS] (mass-to-charge ratio analysis aspects of SIMS for material analysis G01N27/62)
- G01Q 10/04: Fine scanning or positioning
- H01J 49/126: {Other arc discharge ion sources using an applied magnetic field}
- H01J 49/26: Mass spectrometers or separator tubes
- H10P 74/203: {Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects}
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)
- G01N: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES (measuring or testing apparatus or processes other than immunoassay, involving enzymes or microorganisms C12M, C12Q)
- G01Q: SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).

## Claims

### Claim 1

A secondary ion mass spectrometry (SIMS) system, comprising:
a sample stage;
a primary ion source and ion optics for producing and directing a primary ion beam to the sample stage;
an extraction lens directed at the sample stage, the extraction lens configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage; and
a magnetic sector spectrograph coupled to the extraction lens along an optical path of the SIMS system, the magnetic sector spectrograph comprising an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).

### Claim 2 (depends on 1)

The SIMS system of claim 1, wherein the sample stage contains a Faraday cup.

### Claim 3 (depends on 1)

The SIMS system of claim 1, further comprising:
a plurality of detectors spaced along a plane of the magnetic sector spectrograph.

### Claim 4 (depends on 3)

The SIMS system of claim 3, wherein the plurality of detectors is for detecting a corresponding plurality of different species from a beam of the secondary ions emitted from the sample.

### Claim 5 (depends on 1)

The SIMS system of claim 1, further comprising:
a first additional ESA coupled along the optical path of the SIMS system, between the extraction lens and the ESA of the magnetic sector spectrograph; and
a second additional ESA coupled along the optical path of the SIMS system, between the first additional ESA and the ESA of the magnetic sector spectrograph.

### Claim 6 (depends on 5)

The SIMS system of claim 5, wherein the first additional ESA is configured to spread a beam of the secondary ions emitted from the sample, and wherein the second additional ESA is configured to concentrate the beam of the secondary ions received from the first additional ESA.

### Claim 7 (depends on 6)

The SIMS system of claim 6, further comprising:
one or more slits along the optical path of the SIMS system, between the first additional ESA and the second additional ESA.

### Claim 8 (depends on 7)

The SIMS system of claim 7, wherein the first additional ESA, the second additional ESA, and the one or more slits are included in a charge compensation system of the SIMS system.

### Claim 9 (depends on 5)

The SIMS system of claim 5, wherein the first additional ESA and the second additional ESA together direct the optical path of the SIMS system from above the sample stage to below the sample.

### Claim 10 (depends on 9)

The SIMS system of claim 9, wherein a magnet of the MSA is located below the sample stage.

### Claim 11 (depends on 1)

The SIMS system of claim 1, wherein the low extraction field has an absolute value of at most approximately 10 Volts/mm.

### Claim 12 (depends on 1)

The SIMS system of claim 1, further comprising:
a transfer robot coupled to the sample stage.

### Claim 13 (depends on 12)

The SIMS system of claim 12, further comprising:
a receptacle coupled to the transfer robot, the receptacle being capable of containing calibration or reference wafers or wafer-like carriers capable of containing calibration or reference samples.

### Claim at position 14

-30. (canceled)