# US 2018/0025763 A1 · Magnetic memory

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- Number: US 2018/0025763 A1
- Document ID: US20180025763A1
- Status: Published application
- Kind: A1
- Application number: 15/443,299
- Filed: 2017-02-27
- Published: 2018-01-25
- Earliest claimed: 2016-07-22
- Assignees: Kabushiki Kaisha Toshiba
- Applicants: Kabushiki Kaisha Toshiba
- Inventors: Tsuyoshi KONDO; Takuya SHIMADA; Yasuaki OOTERA
- Web page: https://patentgrep.com/patent/US20180025763A1

## CPC

- G11C 11/161: {details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell}
- G11C 19/0841: {using electric current}
- H10B 61/10: {comprising components having two electrodes, e.g. diodes or MIM elements}
- H10N 50/10: Magnetoresistive devices
- H10N 50/80: Constructional details
- G11C 11/1673: {Reading or sensing circuits or methods}
- G11C 11/1675: {Writing or programming circuits or methods}
- G11C: STATIC STORES (semiconductor memory devices H10B)
- H10B: ELECTRONIC MEMORY DEVICES
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR

## Abstract

According to one embodiment, the magnetic memory includes a structure including a first magnetic layer and a conductive layer, a second magnetic layer, an intermediate layer, a third magnetic layer, and a fourth magnetic layer. The first magnetic layer is provided between the second magnetic layer and the conductive layer. The intermediate layer is provided between the second magnetic layer and the first magnetic layer. The third magnetic layer is provided between a second electrode and the intermediate layer. The fourth magnetic layer is provided between a first electrode and the intermediate layer. Further, the magnetic memory includes a first conductive-type first semiconductor layer electrically connected with the first electrode, a first conductive-type second semiconductor layer electrically connected with the second magnetic layer, and a second conductive-type third semiconductor layer electrically connected with the first semiconductor layer and the second semiconductor layer.

## Claims

### Claim 1

A magnetic memory comprising:
a structure including a first magnetic layer and a conductive layer;
a second magnetic layer having the first magnetic layer arranged between the second magnetic layer and the conductive layer;
an intermediate layer provided between the first magnetic layer and the second magnetic layer;
a first electrode electrically connected with a first portion of the structure;
a second electrode electrically connected with a second portion of the structure;
a third magnetic layer provided between the second electrode and the intermediate layer;
a fourth magnetic layer provided between the first electrode and the intermediate layer;
a first semiconductor layer having a first conductive-type, electrically connected with the first electrode;
a second semiconductor layer having a first conductive-type, electrically connected with the second magnetic layer; and
a third semiconductor layer having a second conductive-type, electrically connected with the first semiconductor layer and the second semiconductor layer.

### Claim 2 (depends on 1)

The magnetic memory according to claim 1, wherein
the first electrode, the intermediate layer, the second electrode, the third magnetic layer, and the fourth magnetic layer are lined up in a first direction.

### Claim 3 (depends on 1)

The magnetic memory according to claim 1, wherein the first electrode is connected with the second electrode by a parallel circuit including a first resistor portion by the conductive layer, and a second resistor portion by the first magnetic layer and connected in parallel to the first resistor portion.

### Claim 4 (depends on 2)

The magnetic memory according to claim 2, wherein a resistance value of the first resistor portion is lower than a resistance value of the second resistor portion.

### Claim 5 (depends on 1)

The magnetic memory according to claim 1, wherein the conductive layer is nonmagnetic.

### Claim 6 (depends on 1)

The magnetic memory according to claim 1, wherein the third magnetic layer adds a magnetic field to the first magnetic layer.

### Claim 7 (depends on 1)

The magnetic memory according to any claim 1, further comprising:
a first wiring electrically connected with the second magnetic layer and the second semiconductor layer; and
a second wiring electrically connected with the second electrode.

### Claim 8 (depends on 7)

The magnetic memory according to claim 7, further comprising:
a circuit element including
the first semiconductor layer having a first conductive-type electrically connected with the first electrode,
the second semiconductor layer having the first conductive-type electrically connected with the second magnetic layer, and
the third semiconductor layer having the second conductive-type electrically connected with the first semiconductor layer and the second semiconductor layer, wherein
the circuit element has a positive threshold voltage Vth and a negative threshold voltage −Vth, and
a voltage Vr between the first wiring and the second wiring is
Vr<|Vth|
in a read operation, and
a voltage Vw between the first wiring and the second wiring is
Vth≦Vw or −Vw≦−Vth
in a write operation.

### Claim 9 (depends on 8)

The magnetic memory according to claim 8, further comprising:
a first external terminal; and
a second external terminal, wherein
the first external terminal is electrically connected with the first wiring,
the second external terminal is electrically connected with the second wiring,
a first potential difference is provided to the first external terminal and the second external terminal in the read operation, and
a second potential difference is provided to the first external terminal and the second external terminal in the write operation.

### Claim 10 (depends on 1)

The magnetic memory according to claim 1, further comprising:
a third electrode electrically connected with a third portion of the structure.

### Claim 11 (depends on 10)

The magnetic memory according to claim 10, further comprising:
a third wiring electrically connected with the third electrode.

### Claim 12 (depends on 11)

The magnetic memory according to claim 11, wherein first information and second information are written in the first magnetic layer.

### Claim 13 (depends on 12)

The magnetic memory according to claim 12, wherein
the first magnetic layer includes a first magnetic domain and a second magnetic domain, and
the first information is written in the first magnetic domain, and the second information is written in the second magnetic domain.

### Claim 14 (depends on 13)

The magnetic memory according to claim 13, wherein the first magnetic domain and the second magnetic domain are shifted in the first magnetic layer.

### Claim 15 (depends on 14)

The magnetic memory according to claim 14, further comprising:
a third external terminal, wherein
the third external terminal is electrically connected with the third wiring, and
a third potential difference is provided to the second external terminal and the third external terminal in the shifting of the first magnetic domain and the second magnetic domain.

### Claim 16 (depends on 14)

The magnetic memory according to claim 14, wherein
the structure includes an area between the first electrode and the third electrode, and
the first magnetic domain and the second magnetic domain are shifted in the area of the structure.

### Claim 17 (depends on 16)

The magnetic memory according to claim 16, wherein the area of the structure is distant from the third magnetic layer.

### Claim 18

A magnetic memory comprising:
a structure including a first magnetic layer and a conductive layer;
a second magnetic layer having the first magnetic layer arranged between the second magnetic layer and the conductive layer;
an intermediate layer provided between the first magnetic layer and the second magnetic layer;
a first electrode electrically connected with a first portion of the structure;
a second electrode electrically connected with a second portion of the structure;
a third magnetic layer provided between the second electrode and the intermediate layer;
a first semiconductor layer having a first conductive-type, electrically connected with the first electrode;
a second semiconductor layer having a first conductive-type, electrically connected with the second magnetic layer; and
a third semiconductor layer having a second conductive-type, electrically connected with the first semiconductor layer and the second semiconductor layer.

### Claim 19 (depends on 18)

The magnetic memory according to claim 18, wherein the first electrode, the intermediate layer, the second electrode, and the third magnetic layer are lined up in a first direction.

### Claim 20 (depends on 1)

The magnetic memory according to claim 1, wherein the third magnetic layer contains antiferromagnetism.