# US 2018/0023209 A1 · Methods and apparatus for wetting pretreatment for through resist metal plating > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2018/0023209 A1 - Document ID: US20180023209A1 - Status: Published application - Kind: A1 - Application number: 15/724,120 - Filed: 2017-10-03 - Published: 2018-01-25 - Earliest claimed: 2009-06-17 - Assignees: Novellus Systems, Inc. - Applicants: Novellus Systems, Inc. - Inventors: Bryan L. Buckalew; Steven T. Mayer; Thomas A. Ponnuswamy; Robert Rash; Brian Paul Blackman; Doug Higley - Web page: https://patentgrep.com/patent/US20180023209A1 ## CPC - C25D 7/123: {Semiconductors first coated with a seed layer or a conductive layer} - C25D 3/12: of nickel or cobalt - C25D 3/30: of tin - C25D 5/003: {Electroplating using gases, e.g. pressure influence} - C25D 5/022: {using masking means} - C25D 5/12: at least one layer being of nickel or chromium - C25D 5/56: of plastics - C25D 17/001: {Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells} - C25D 21/04: Removal of gases or vapours {; Gas or pressure control} - C25D 21/12: Process control or regulation (controlling or regulating in general G05) - H10P 14/47: Electrolytic deposition, i.e. electroplating; Electroless plating - H10P 14/6508: {by exposure to a liquid} - H10P 72/0414: {using mainly spraying means, e.g. nozzles} - H10P 72/0444: {Apparatus for wiring semiconductor or solid-state device} - H10P 95/00: Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass - H10W 20/023: {the interconnections being through-semiconductor vias} - H10W 20/0261: {characterised by the filling method or the material of the conductive fill} - H10W 20/052: {by treatments not introducing additional elements therein} - H10W 20/057: {by selectively depositing, e.g. by using selective CVD or plating} - C25D 3/38: of copper - H10W 20/056: {by filling conductive material into holes, grooves or trenches} - H10W 20/063: {by forming conductive members before forming protective insulating material} - C25D: PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract Disclosed are pre-wetting apparatus designs and methods. In some embodiments, a pre-wetting apparatus includes a degasser, a process chamber, and a controller. The process chamber includes a wafer holder configured to hold a wafer substrate, a vacuum port configured to allow formation of a subatmospheric pressure in the process chamber, and a fluid inlet coupled to the degasser and configured to deliver a degassed pre-wetting fluid onto the wafer substrate at a velocity of at least about 7 meters per second whereby particles on the wafer substrate are dislodged and at a flow rate whereby dislodged particles are removed from the wafer substrate. The controller includes program instructions for forming a wetting layer on the wafer substrate in the process chamber by contacting the wafer substrate with the degassed pre-wetting fluid admitted through the fluid inlet at a flow rate of at least about 0.4 liters per minute. ## Claims ### Claim 1 A method comprising: (a) providing a wafer substrate having an exposed metal layer on at least a portion of a surface of the wafer substrate to a process chamber, wherein the process chamber comprises a liquid inlet, the liquid inlet including at least one nozzle configured to deliver a pre-wetting liquid onto the wafer substrate; (b) reducing pressure in the process chamber to a subatmospheric pressure using a vacuum port in the process chamber; (c) degassing the pre-wetting liquid to remove one or more dissolved gasses from the pre-wetting liquid using a degasser coupled to the liquid inlet; and (d) contacting the wafer substrate with the degassed pre-wetting liquid at the subatmospheric pressure in the process chamber and thereby forming a wetting layer on the wafer substrate, held by a wafer holder in the process chamber, wherein the degassed pre-wetting liquid is delivered from the one or more nozzles onto the wafer substrate at a velocity of at least about 7 meters per second and is admitted through the liquid inlet to the process chamber at a flow rate of at least about 0.4 liters per minute. ### Claim 2 (depends on 1) The method of claim 1, wherein (d) comprises dislodging and removing particulate material from the wafer substrate. ### Claim 3 (depends on 1) The method of claim 1, further comprising rotating the wafer substrate while the degassed pre-wetting liquid is delivered onto the wafer substrate. ### Claim 4 (depends on 1) The method of claim 1, wherein the at least one nozzle includes a fan nozzle and wherein the delivered degassed pre-wetting liquid impinges the wafer substrate in a shape of a line. ### Claim 5 (depends on 1) The method of claim 1, wherein the process chamber includes a cover and a body, wherein the method includes: prior to forming the subatmospheric pressure in the process chamber, moving the body in a substantially vertical manner, while the cover remains stationary to bring the body into contact with the cover and to form a vacuum seal. ### Claim 6 (depends on 5) The method of claim 5, wherein the at least one nozzle is attached to the cover. ### Claim 7 (depends on 1) The method of claim 1, wherein (d) comprises delivering the degassed pre-wetting fluid onto the wafer substrate from an edge of the wafer substrate to substantially the center of the wafer substrate. ### Claim 8 (depends on 1) The method of claim 1, wherein (d) comprises holding the wafer substrate in a substantially face-up orientation. ### Claim 9 (depends on 1) The method of claim 1, wherein the degasser is a membrane contractor degasser. ### Claim 10 (depends on 1) The method of claim 1, wherein the degassed pre-wetting liquid has about 0.5 ppm or less dissolved atmospheric gas. ### Claim 11 (depends on 1) The method of claim 1, wherein the pre-wetting liquid is selected from the group consisting of deionized water and a chemical solution that aids in dislodging and removing particles from the wafer substrate. ### Claim 12 (depends on 1) The method of claim 1, wherein the vacuum port is located below the wafer holder. ### Claim 13 (depends on 1) The method of claim 1, wherein (d) comprises maintaining the subatmospheric pressure of less than about 50 Torr during formation of the wetting layer on the wafer substrate. ### Claim 14 (depends on 1) The method of claim 1, further comprising: (e) after forming the wetting layer on the wafer substrate, stopping delivery of the degassed pre-wetting liquid, and (f) after stopping the delivery of the degassed pre-wetting liquid, rotating the wafer substrate to remove excess surface entrained degassed pre-wetting liquid from the wafer substrate. ### Claim 15 (depends on 14) The method of claim 14, further comprising: increasing pressure in the process chamber to atmospheric pressure or to above atmospheric pressure after stopping the delivery of the degassed pre-wetting liquid and prior to removal of the excess surface entrained pre-wetting liquid. ### Claim 16 (depends on 1) The method of claim 1, wherein the wafer substrate comprises a plurality of recessed features formed in a photoresist, and wherein (d) removes photoresist particles from the plurality of recesses. ### Claim 17 (depends on 1) The method of claim 1, wherein the wafer substrate comprises a plurality of recessed features formed in a photoresist, wherein the recessed features in the photoresist have openings having a size of about 5-200 micrometers. ### Claim 18 (depends on 1) The method of claim 1, wherein (d) is initiated after the pressure in the process chamber is reduced to 50 torr or less. ### Claim 19 (depends on 1) The method of claim 1, wherein (d) comprises contacting the wafer substrate with the degassed pre-wetting liquid for about 10 seconds to 120 seconds. ### Claim 20 (depends on 1) The method of claim 1, further comprising: applying photoresist to the wafer substrate; exposing the photoresist to light; patterning the photoresist and transferring the pattern to the wafer substrate; and selectively removing the photoresist from the wafer substrate.