# US 2018/0022761 A1 · Si-CONTAINING FILM FORMING PRECURSORS AND METHODS OF USING THE SAME

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- Number: US 2018/0022761 A1
- Document ID: US20180022761A1
- Status: Published application
- Kind: A1
- Application number: 15/692,544
- Filed: 2017-08-31
- Published: 2018-01-25
- Earliest claimed: 2015-03-30
- Assignees: L'Air Liquide, Societe Anonyme pour I'Etude et l'Exploitation des Procedes Georges Claude
- Applicants: L'Air Liquide, Société Anonyme pour I'Etude et l'Exploitation des Procédés Georges Claude
- Inventors: Jean-Marc GIRARD; Peng ZHANG; Antonio SANCHEZ; Manish KHANDELWAL; Gennediy ITOV; Reno PESARESI
- Web page: https://patentgrep.com/patent/US20180022761A1

## CPC

- H10P 14/6339: {deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD}
- C01B 21/087: containing one or more hydrogen atoms
- C01B 21/088: containing also one or more halogen atoms
- C07F 7/025: {without C-silicon linkages}
- C23C 16/308: {Oxynitrides}
- C23C 16/345: {Silicon nitride}
- C23C 16/402: {Silicon dioxide}
- C23C 16/45525: {Atomic layer deposition [ALD]}
- C23C 16/45553: {characterized by the use of precursors specially adapted for ALD}
- C23C 16/515: using pulsed discharges
- H10P 14/6689: {the compound being a silazane}
- H10P 14/69215: {the material being a silicon oxide, e.g. SiO2}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- C01B: NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; {METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C}
- C07F: ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM (metal-containing porphyrins C07D487/22)
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)

## Abstract

Mono-substituted TSA precursor Si-containing film forming compositions are disclosed. The precursors have the formula: (SiH3)2N—SiH2—X, wherein X is selected from a halogen atom; an isocyanato group; an amino group; an N-containing C4-C10 saturated or unsaturated heterocycle; or an alkoxy group. Methods for forming the Si-containing film using the disclosed mono-substituted TSA precursor are also disclosed.

## Claims

### Claim 1

An ALD silicon and oxygen containing film formation process, the process comprising the steps of:
depositing a silicon and oxygen containing film on a substrate by sequentially introducing a vapor of a mono-substituted TSA precursor and an oxygen-containing reactant into a reactor containing the substrate, the mono-substituted TSA precursor having a formula (SiH3)2N—SiH2—X, wherein X is a halogen atom or an amino group [—NR2] and each R is independently selected from the group consisting of H; a C1-C6 hydrocarbyl group; or a silyl group [SiR′3] with each R′ being independently selected from H or a C1-C6 hydrocarbyl group.

### Claim 2 (depends on 1)

The ALD silicon and oxygen containing film formation process of claim 1, wherein X is Cl.

### Claim 3 (depends on 1)

The ALD silicon and oxygen containing film formation process of claim 1, wherein X is NiPr2.

### Claim 4 (depends on 1)

The ALD silicon and oxygen containing film formation process of claim 1, wherein X is NEt2.

### Claim 5 (depends on 1)

The ALD silicon and oxygen containing film formation process of claim 1, wherein X is N(SiH3)2.

### Claim 6 (depends on 1)

The ALD silicon and oxygen containing film formation process of claim 1, wherein the oxygen-containing reactant is selected from the group consisting of O2, O3, H2O, H2O2, NO, NO2, N2O, alcohols, diols, carboxylic acids, ketones, ethers, O atoms, O radicals, O ions, and combinations thereof.

### Claim 7 (depends on 6)

The ALD silicon and oxygen containing film formation process of claim 6, wherein the oxygen-containing reactant is plasma O2.

### Claim 8 (depends on 6)

The ALD silicon and oxygen containing film formation process of claim 6, wherein the silicon and oxygen containing film is silicon oxide.

### Claim 9 (depends on 6)

The ALD silicon and oxygen containing film formation process of claim 6, further comprising introducing a nitrogen-containing reactant into the reactor.

### Claim 10 (depends on 9)

The ALD silicon and oxygen containing film formation process of claim 9, wherein the nitrogen-containing reactant is selected from the group consisting of ammonia, N2, N atoms, N radicals, N ions, saturated or unsaturated hydrazine, amines, diamines, ethanolamine, and combinations thereof.

### Claim 11 (depends on 9)

The ALD silicon and oxygen containing film formation process of claim 9, wherein the silicon and oxygen containing film is silicon oxynitride.

### Claim 12

An ALD silicon oxide film formation process, the process comprising the steps of:
depositing a silicon oxide film on a substrate at a rate ranging from approximately 2.1 A/cycle to approximately 3.1 A/cycle by sequentially introducing a vapor of a mono-substituted TSA precursor and an oxygen-containing reactant into a reactor containing the substrate, the mono-substituted TSA precursor having a formula (SiH3)2N—SiH2—X, wherein X is a halogen atom or an amino group [—NR2] and each R is independently selected from the group consisting of H or a C1-C6 hydrocarbyl group.

### Claim 13 (depends on 12)

The ALD silicon oxide film formation process of claim 12, wherein the oxygen-containing reactant is selected from the group consisting of O2, O3, H2O, H2O2, NO, NO2, N2O, alcohols, diols, carboxylic acids, ketones, ethers, O atoms, O radicals, O ions, and combinations thereof.

### Claim 14 (depends on 13)

The ALD silicon oxide film formation process of claim 13, wherein the oxygen-containing reactant is plasma O2.

### Claim 15 (depends on 12)

The ALD silicon oxide film formation process of claim 12, wherein X is Cl.

### Claim 16 (depends on 12)

The ALD silicon oxide film formation process of claim 12, wherein X is NiPr2.

### Claim 17 (depends on 12)

The ALD silicon oxide film formation process of claim 12, wherein X is NEt2.