# US 2018/0022650 A1 · Low-K And Mid-K LTCC Dielectric Compositions And Devices

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- Number: US 2018/0022650 A1
- Document ID: US20180022650A1
- Status: Published application
- Kind: A1
- Application number: 15/550,101
- Filed: 2016-02-17
- Published: 2018-01-25
- Earliest claimed: 2015-02-27
- Assignees: Ferro Corporation
- Applicants: Ferro Corporation
- Inventors: Walter J. Symes, Jr.
- Web page: https://patentgrep.com/patent/US20180022650A1

## CPC

- C04B 35/495: based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates
- C04B 35/6262: {of calcined, sintered clinker or ceramics}
- C04B 35/62685: {characterised by the order of addition of constituents or additives}
- C04B 2235/3203: Lithium oxide or oxide-forming salts thereof
- C04B 2235/3208: Calcium oxide or oxide-forming salts thereof, e.g. lime
- C04B 2235/3213: Strontium oxides or oxide-forming salts thereof
- C04B 2235/3215: Barium oxides or oxide-forming salts thereof
- C04B 2235/3232: Titanium oxides or titanates, e.g. rutile or anatase
- C04B 2235/3236: Alkaline earth titanates
- C04B 2235/3258: Tungsten oxides, tungstates, or oxide-forming salts thereof
- C04B 2235/3281: Copper oxides, cuprates or oxide-forming salts thereof, e.g. CuO or Cu2O
- C04B 2235/3284: Zinc oxides, zincates, cadmium oxides, cadmiates, mercury oxides, mercurates or oxide forming salts thereof
- C04B 2235/3409: Boron oxide, borates, boric acids, or oxide forming salts thereof, e.g. borax
- C04B 2235/3418: Silicon oxide, silicic acids or oxide forming salts thereof, e.g. silica sol, fused silica, silica fume, cristobalite, quartz or flint
- C04B 2235/3436: Alkaline earth metal silicates, e.g. barium silicate
- C04B 2235/445: Fluoride containing anions, e.g. fluosilicate
- C04B 2235/5445: submicron sized, i.e. from 0,1 to 1 micron
- C04B 2235/72: Products characterised by the absence or the low content of specific components, e.g. alkali metal free alumina ceramics
- C04B 2235/77: Density
- C04B: LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE {(roofing granules E04D7/005)}; CERAMICS (devitrified glass-ceramics C03C10/00); REFRACTORIES; TREATMENT OF NATURAL STONE

## Abstract

LTCC devices are produced from dielectric compositions comprising a mixture of precursor materials that, upon firing, forms a dielectric material comprising a barium-tungsten-silicon host.

## Claims

### Claim 1

A composition comprising a mixture of precursor materials that, upon firing, forms a lead-free and cadmium-free dielectric material comprising a barium-tungsten-silicon oxide host material.

### Claim 2 (depends on 1)

The composition according to claim 1, wherein the dielectric material exhibits a dielectric constant of 1 to 50.

### Claim 3

A host material comprising:
(i) 30-50 wt % BaO,
(ii) 45-65 wt % WO3,
(iii) 1-10 wt % SiO2,
(iv) no lead, and
(v) no cadmium.

### Claim 4 (depends on 3)

A lead-free and cadmium-free dielectric material comprising, prior to firing:
(a) 80-99.9 wt % of the host material of claim 3 together with
(b) 8-13 wt % BaSiO3,
(c) 0.5-3 wt % BaCO3,
(d) 0.5-3 wt % H3BO3,
(e) 0.1-1 wt % LiF and
(f) 0 to 0.5 wt % CuO,
or oxide equivalents of any of the foregoing.

### Claim 5 (depends on 4)

A lead-free and cadmium-free dielectric material comprising, prior to firing:
(a) 90-99.9 wt % of the host material of claim 4 3 together with
(b) 0.2-3 wt % BaCO3,
(c) 0-3 wt % H3BO3,
(d) 0-1 wt % LiF,
(e) 0-0.5 wt % CuO,
(f) 0-1.5 wt % Li2CO3,
(g) 0-1 wt % SiO2,
or oxide equivalents of any of the foregoing.

### Claim 6 (depends on 4)

A lead-free and cadmium-free dielectric material comprising, prior to firing:
(a) 37-99.7 wt % of the host material of claim 4 3 together with
(b) 0.1-2 wt % BaCO3,
(c) 0.1-5 wt % H3BO3,
(d) 0 to 1 wt % CuO,
(e) 0.1-2 wt % Li2CO3,
(f) 0-5 wt % SiO2,
(g) 0-1 wt % ZrO2,
(h) 0-10 wt % ZnO,
(i) 0-15 wt % SrTiO3, and
(j) 0-50 wt % CaTiO3.
or oxide equivalents of any of the foregoing.

### Claim 7

A lead-free and cadmium-free composition comprising a mixture of precursors that, upon firing, forms a lead-free and cadmium-free dielectric material comprising:
(a) 10-55 wt % BaO,
(b) 15-60 wt % WO3,
(c) 0.5-15 wt % SiO2,
(d) 0-27 wt % CaO,
(e) 0-35 wt % TiO2,
(f) 0-15 wt % SrO,
(g) 0.05-5 wt % B2O3,
(h) 0.05-5 wt % Li2O,
(i) 0-5 wt % LiF,
(j) 0-5 wt % CuO, and
(k) 0-10 wt % ZnO.

### Claim at position 8

8-10. (canceled)

### Claim 11 (depends on 4)

An electric or electronic component comprising, prior to firing, the lead-free and cadmium-free dielectric material of claim 4, together with a conductive paste comprising:
a. 60-90 wt % Ag+Pd+Pt+Au,
b. 1-10 wt % of an additive selected from the group consisting of silicides, carbides, nitrides, and borides of transition metals,
c. 0.5-10 wt % of at least one glass frit, and
d. 10-40 wt % of an organic portion.

### Claim 12 (depends on 11)

The electric or electronic component of claim 11, wherein the electric or electronic component is selected from the group consisting of high Q resonators, electro-magnetic interference filter, band pass filters, wireless packaging systems, and combinations thereof.

### Claim 13 (depends on 4)

A method of forming an electronic component comprising:
(a1) applying dielectric composition of claim 4 to a substrate or
(a2) applying a tape comprising the dielectric composition of claim 4 to a substrate or
(a3) compacting a plurality of particles of the dielectric composition of claim 4 to form a monolithic composite substrate; and
(b) firing the substrate at a temperature sufficient to sinter the dielectric composition.

### Claim 14 (depends on 13)

The method of claim 13, wherein the firing is conducted at a temperature of from about 800° C. to about 900° C.

### Claim 15 (depends on 4)

A multi-layer electronic component comprising, prior to firing, at least one layer of a first dielectric material of claim 4 having a dielectric constant greater than 10 in combination with at least one alternating separate layer of having a dielectric constant of less than 10 wherein alternating layers have differing dielectric constants.

### Claim at position 14

16-18. (canceled)

### Claim 19

A host material comprising:
(a) 30-45 wt % BaO,
(b) 50-60 wt % WO3,
(c) 1-10 wt % SiO2,
(d) no lead, and
(e) no cadmium.

### Claim 20 (depends on 19)

A lead-free and cadmium-free dielectric composition comprising, prior to firing:
(a) 80-99.9 wt % of the host material of claim 19 together with
(b) 8-13 wt % BaSiO3,
(c) 0.5-3 wt % BaCO3,
(d) 0.5-3 wt % H3BO3,
(e) 0.1-1 wt % LiF and
(f) 0 to 0.5 wt % CuO,
or oxide equivalents of any of the foregoing.

### Claim 21 (depends on 19)

A lead-free and cadmium-free dielectric composition comprising, prior to firing:
(a) 90-99.9 wt % of the host material of claim 19 together with
(b) 0.5-2 wt % BaCO3,
(c) 1-3 wt % H3BO3,
(d) 0-1 wt % LiF and
(e) 0 to 0.5 wt % CuO,
(f) 0-1 wt % Li2CO3, and
(g) 0-1 wt % SiO2,
or oxide equivalents of any of the foregoing.

### Claim 22 (depends on 3)

A lead-free and cadmium-free dielectric composition comprising, prior to firing:
(a) 87-99.9 wt % of the host material of claim 3 together with
(b) 0.8-1.5 wt % BaCO3,
(c) 0.3-1 wt % H3BO3,
(d) 0-1 wt % LiF,
(e) 0 to 0.5 wt % CuO,
(f) 0.1-0.8 wt % Li2CO3,
(g) 0-5 wt % SiO2,
(h) 0-1 wt % ZrO2, and
(i) 0-10 wt % CaTiO3,
or oxide equivalents of any of the foregoing.

### Claim 23

A lead-free and cadmium-free dielectric composition comprising:
(a) 20-70 wt % BaO,
(b) 20-70 wt % WO3,
(c) 0.1-10 wt % SiO2,
(d) 0-10 wt % CaO,
(e) 0-10 wt % TiO2,
(f) 0.10-5 wt % B2O3,
(g) 0.1-5 wt % Li2O3, and
(h) 0.1-5 wt % LiF.

### Claim at position 20

24-26. (canceled)

### Claim 27 (depends on 23)

An electric or electronic component comprising, prior to firing, the lead-free and cadmium-free dielectric material of claim 23, together with a conductive paste comprising:
(a) 60-90 wt % Ag+Pd+Pt+Au,
(b) 1-10 wt % of an additive selected from the group consisting of silicides, carbides, nitrides, and borides of transition metals,
(c) 0.5-10 wt % of at least one glass frit,
(d) 10-40 wt % of an organic portion.

### Claim 28 (depends on 27)

The electric or electronic component of claim 27, wherein the electric or electronic component is selected from the group consisting of high Q resonators, band pass filters, wireless packaging systems, and combinations thereof.

### Claim 29

(canceled)