# US 2018/0022601 A1 · Method for producing a semiconductor module > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2018/0022601 A1 - Document ID: US20180022601A1 - Status: Published application - Kind: A1 - Application number: 15/651,522 - Filed: 2017-07-17 - Published: 2018-01-25 - Earliest claimed: 2016-07-20 - Assignees: Infineon Technologies AG - Applicants: Infineon Technologies AG - Inventors: Claus Waechter; Edward Fuergut; Bernd Goller; Michael Ledutke; Dominic Maier - Web page: https://patentgrep.com/patent/US20180022601A1 ## CPC - B81C 1/00269: {Bonding of solid lids or wafers to the substrate} - B81B 7/0058: {for protecting against damages due to external chemical or mechanical influences, e.g. shocks or vibrations} - B81B 7/0077: {Other packages not provided for in groups B81B7/0035 - B81B7/0074} - B81C 1/00888: {Multistep processes involving only mechanical separation, e.g. grooving followed by cleaving} - B81B 2201/0235: Accelerometers - B81B 2201/0257: Microphones or microspeakers - B81B 2203/0127: Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function - B81B 2203/0315: Cavities - B81B 2207/012: the micromechanical device and the control or processing electronics being separate parts in the same package - B81B 2207/09: Packages - B81B 2207/092: Buried interconnects in the substrate or in the lid - B81B 2207/096: through the substrate - B81C 2201/034: Moulding - B81C 2203/0118: Bonding a wafer on the substrate, i.e. where the cap consists of another wafer - B81C 2203/032: Gluing - B81C 2203/0792: Forming interconnections between the electronic processing unit and the micromechanical structure - B81C: PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS (making microcapsules or microballoons B01J13/02; processes or apparatus specially adapted for the manufacture or treatment of piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/01) - B81B: MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES (piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/00, H10N35/00) ## Abstract The method comprises fabricating a semiconductor panel comprising a plurality of semiconductor devices, fabricating a cap panel comprising a plurality of caps, bonding the cap panel onto the semiconductor panel so that each one of the caps covers one or more of the semiconductor devices, and singulating the bonded panels into a plurality of semiconductor modules. ## Claims ### Claim 1 A method for producing a semiconductor module, the method comprising: fabricating a semiconductor panel comprising a plurality of semiconductor devices; fabricating a cap panel comprising a plurality of caps; bonding the cap panel onto the semiconductor panel so that each one of the caps covers one or more of the semiconductor devices; and singulating the bonded panels into a plurality of semiconductor modules. ### Claim 2 (depends on 1) The method according to claim 1, further comprising: fabricating the cap panel comprises forming. ### Claim 3 (depends on 2) The method according to claim 2, wherein fabricating the cap panel comprises molding. ### Claim 4 (depends on 1) The method according to claim 1, wherein each one of the semiconductor devices comprises a sensor device. ### Claim 5 (depends on 4) The method according to claim 4, wherein each one of the semiconductor devices comprises one or more of a pressure sensor, a shock sensor, an acceleration sensor, a temperature sensor, a gas sensor, a humidity sensor, a magnetic field sensor, an electric field sensor, or an optical sensor. ### Claim 6 (depends on 1) The method according to claim 1, wherein each one of the semiconductor devices comprises a MEMS device. ### Claim 7 (depends on 1) The method according to claim 1, wherein the semiconductor panel is a reconfigured wafer obtained by processing a plurality of semiconductor chips in a semiconductor wafer, dicing out the semiconductor chips, and embedding the semiconductor chips in an encapsulant. ### Claim 8 (depends on 1) The method according to claim 1, further comprising: fabricating the cap panel comprises providing the caps or portions thereof with an electrical conductivity. ### Claim 9 A semiconductor module, comprising: a semiconductor device; and a cap disposed above the semiconductor device; wherein the semiconductor module is fabricated by bonding a cap panel comprising a plurality of caps onto a semiconductor panel comprising a plurality of semiconductor devices, and singulating the bonded panels into a plurality of semiconductor modules. ### Claim 10 (depends on 9) The semiconductor module according to claim 9, wherein the semiconductor device comprises a sensor device. ### Claim 11 (depends on 10) The semiconductor module according to claim 10, wherein the semiconductor device comprises one or more of a pressure sensor, a shock sensor, an acceleration sensor, a temperature sensor, a gas sensor, a humidity sensor, a magnetic field sensor, an electric field sensor, or an optical sensor. ### Claim 12 (depends on 9) The semiconductor module according to claim 9, wherein the semiconductor device comprises a MEMS device. ### Claim 13 (depends on 9) The semiconductor module according to claim 9, wherein the semiconductor module comprises two or more semiconductor devices. ### Claim 14 (depends on 13) The semiconductor module according to claim 13, wherein the semiconductor module comprises a sensor device and a further electronic device, wherein the further electronic device is connected to the sensor device and is configured to provide power supply to the sensor device and/or read out electrical signals from the sensor device. ### Claim 15 (depends on 14) The semiconductor module according to claim 14, wherein the further electronic device is an ASIC device. ### Claim 16 A packaged MEMS device, comprising: an embedding arrangement; a MEMS device disposed in the embedding arrangement; a cap disposed above the MEMS device; wherein the packaged MEMS device is fabricated by bonding a cap panel comprising a plurality of caps onto a MEMS panel comprising a plurality of MEMS devices, and singulating the bonded panels into a plurality of packaged MEMS devices. ### Claim 17 (depends on 16) The packaged MEMS device according to claim 16, wherein the MEMS device comprises a sensor device. ### Claim 18 (depends on 17) The packaged MEMS device according to claim 17, wherein the MEMS device comprises one or more of a pressure sensor, a shock sensor, an acceleration sensor, a temperature sensor, a gas sensor, a humidity sensor, a magnetic field sensor, an electric field sensor, or an optical sensor. ### Claim 19 (depends on 16) The packaged MEMS device according to claim 16, wherein the MEMS device comprises two or more semiconductor devices. ### Claim 20 (depends on 19) The packaged MEMS device according to claim 19, wherein the MEMS device comprises a sensor device and a further electronic device, wherein the further electronic device is connected to the sensor device and is configured to provide power supply to the sensor device and/or read out electrical signals from the sensor device. ### Claim 21 (depends on 20) The packaged MEMS device according to claim 20, wherein the further electronic device is an ASIC device.