Memory management method, memory storage device and memory control circuit unit

A memory storage device, comprising:

• a connection interface unit, configured to couple to a host system;
• a rewritable non-volatile memory module comprising a plurality of physical erasing units;
• and
• a memory control circuit unit, coupled to the connection interface unit and the rewritable non-volatile memory module,
• wherein the memory control circuit unit is configured to configure a default encoding rule for a first physical erasing unit among the physical erasing units, wherein the default encoding rule comprises encoding data to be stored to a first-type physical programming unit belonging to the first physical erasing unit based on a default code rate and encoding data to be stored to a second-type physical programming unit belonging to the first physical erasing unit based on the default code rate,
• wherein the memory control circuit unit is further configured to obtain error estimating information of the first physical erasing unit,
• wherein the memory control circuit unit is further configured to configure a first encoding rule for the first physical erasing unit according to the error estimating information of the first physical erasing unit, wherein the first encoding rule comprises encoding the data to be stored to the first-type physical programming unit belonging to the first physical erasing unit based on a first code rate and encoding the data to be stored to the second-type physical programming unit belonging to the first physical erasing unit based on a second code rate,
• wherein a value of the first code rate is greater than a value of the default code rate, wherein a value of the second code rate is less than the value of the default code rate.

A memory control circuit unit for controlling a rewritable non-volatile memory module comprising a plurality of physical erasing units, the memory control circuit unit comprising:

• a host interface, configured to couple to a host system;
• a memory interface, configured to couple to the rewritable non-volatile memory module;
• an error checking and correcting circuit;
• and
• a memory management circuit, coupled to the host interface, the memory interface and the error checking and correcting circuit,
• wherein the memory management circuit is configured to configure a default encoding rule for a first physical erasing unit among the physical erasing units, wherein the default encoding rule comprises encoding data to be stored to a first-type physical programming unit belonging to the first physical erasing unit based on a default code rate and encoding data to be stored to a second-type physical programming unit belonging to the first physical erasing unit based on the default code rate by the error checking and correcting circuit,
• wherein the memory management circuit is further configured to obtain error estimating information of the first physical erasing unit,
• wherein the memory management circuit is further configured to configure a first encoding rule for the first physical erasing unit according to the error estimating information of the first physical erasing unit, wherein the first encoding rule comprises encoding the data to be stored to the first-type physical programming unit belonging to the first physical erasing unit based on a first code rate and encoding the data to be stored to the second-type physical programming unit belonging to the first physical erasing unit based on a second code rate by the error checking and correcting circuit,
• wherein a value of the first code rate is greater than a value of the default code rate, wherein a value of the second code rate is less than the value of the default code rate.