Bulk acoustic wave filter device
AssigneeSamsung Electro-Mechanics Co., Ltd.
InventorsChang Hyun LIM, Jae Chang LEE, Sung Min CHO, Tae Kyung LEE, Moon Chul LEE
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Abstract
A bulk acoustic wave filter device includes a resonating part, an electrode connecting part, a first layer, and a second layer. The resonating part is disposed on a substrate, and the electrode connecting part connects electrodes of the resonating part. The first layer is disposed on the substrate, and the second layer is disposed on regions of the first layer, other than a lower portion of the electrode connecting part.
Claims20
A bulk acoustic wave filter device, comprising:
- a resonating part disposed on a substrate;
- an electrode connecting part connecting electrodes of the resonating part;
- a first layer disposed on the substrate;
- and
- a second layer disposed on regions of the first layer, other than a lower portion of the electrode connecting part.
A bulk acoustic wave filter device, comprising:
- a resonating part disposed on a substrate;
- an electrode connecting part connecting electrodes of the resonating part;
- a first layer disposed on the substrate and formed of silicon oxide (SiO2), a material comprising silicon oxide (SiO2), aluminum nitride (AlN), or a material comprising aluminum nitride (AlN);
- and
- a second layer disposed on the first layer, other than a lower portion of the electrode connecting part, and formed of silicon nitride (SiN) or a material containing silicon nitride (SiN).
A bulk acoustic wave filter device, comprising:
- a first layer disposed on a substrate and including an air gap disposed between the substrate and the first layer;
- a second layer;
- a third layer disposed over portions of the first layer;
- a lower electrode disposed on a portion of the second layer and a portion of the first layer;
- and
- a piezoelectric layer covering a portion of the lower electrode and a portion of the second layer,
- wherein the second layer is disposed on the first layer, over the air gap, other than a region in which the third layer and the lower electrode are disposed on the first layer.
Dependencies are inferred from the claim text.