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US 2018/0019695 A1Published application
Semiconductor Module
AssigneeMitsubishi Electric Corporation
InventorsMaki HASEGAWA, Takuya SHIRAISHI
Life of this patent
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Abstract
A semiconductor module includes a die pad area between positions where a plurality of power terminals are arranged and positions where an HVIC and an LVIC are arranged. A plurality of RC-IGBTs are arranged in the die pad area at positions closer to the plurality of power terminals than to the HVIC and the LVIC.
Claims11
A semiconductor module, comprising:
- at least one RC-IGBT;
- at least one control IC;
- a power terminal;
- a gate wire which connects a gate of an IGBT in the RC-IGBT and the control IC;
- and
- an emitter wire which connects an emitter of the IGBT in the RC-IGBT and the power terminal,
- the semiconductor module including a die pad area between a position where the power terminal is arranged and a position where the control IC is arranged, the RC-IGBT being arranged in the die pad area at a position closer to the power terminal than to the control IC.
4 more elements
A semiconductor module, comprising:
- a plurality of RC-IGBTs constituting a three-phase inverter;
- at least one control IC;
- a power terminal;
- a gate wire which connects a gate of an IGBT in each of the RC-IGBTs and the control IC;
- and
- an emitter wire which connects an emitter of the IGBT in each of the RC-IGBTs and the power terminal,
- the semiconductor module including a rectangular die pad area between a position where the power terminal is arranged and a position where the control IC is arranged,
- when a side of the die pad area closest to the control IC is defined as a first side and a side opposite to the first side is defined as a second side, one of an RC-IGBT for an upper arm and an RC-IGBT for a lower arm of each phase being arranged at a position closer to the first side than to the second side in a direction perpendicular to the first side, and the other thereof being arranged at a position closer to the second side than to the first side in the direction perpendicular to the first side, in the die pad area.
5 more elements
A semiconductor module, comprising:
- a plurality of RC-IGBTs constituting a three-phase inverter;
- at least one control IC;
- a power terminal;
- a gate wire which connects a gate of an IGBT in each of the RC-IGBTs and the control IC;
- and
- an emitter wire which connects an emitter of the IGBT in each of the RC-IGBTs and the power terminal,
- the semiconductor module including a rectangular die pad area between a position where the power terminal is arranged and a position where the control IC is arranged,
- when a side of the die pad area closest to the control IC is defined as a first side and a side opposite to the first side is defined as a second side, one of an RC-IGBT for an upper arm and an RC-IGBT for a lower arm of each of two phases being arranged at a position closer to the first side than to the second side in a direction perpendicular to the first side, the other thereof being arranged at a position closer to the second side than to the first side in the direction perpendicular to the first side, both of an RC-IGBT for an upper arm and an RC-IGBT for a lower arm of one phase being each arranged at a substantially central position between the first side and the second side, in the die pad area.
5 more elements
Dependencies are inferred from the claim text.