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US 2018/0019686 A1Published application
Semiconductor device and power conversion device
AssigneeKabushiki Kaisha Toshiba
InventorKentaro IKEDA
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Abstract
A semiconductor device according to an embodiment includes a transistor including a first electrode, a second electrode, and a gate electrode, an electric resistance being electrically connected to the gate electrode, a diode including an anode being electrically connected to the first electrode and a cathode being electrically connected between the electric resistance and the gate electrode, and a capacitor being connected in parallel with the electric resistance.
Claims20
A semiconductor device, comprising:
- a transistor including a first electrode, a second electrode, and a gate electrode;
- an electric resistance being electrically connected to the gate electrode;
- a diode including an anode being electrically connected to the first electrode and a cathode being electrically connected between the electric resistance and the gate electrode;
- and
- a capacitor being connected in parallel with the electric resistance.
2 more elements
A power conversion device, comprising:
- a semiconductor device including
- a transistor including a first electrode, a second electrode, and a gate electrode,
- an electric resistance being electrically connected to the gate electrode,
- a diode including an anode being electrically connected to the first electrode and a cathode being electrically connected between the electric resistance and the gate electrode, and
- a capacitor being connected in parallel with the electric resistance.
2 more elements
Dependencies are inferred from the claim text.