Semiconductor switch control device
AssigneeYazaki Corporation
InventorMitsuaki Morimoto
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Abstract
The semiconductor switch control device includes a first FET provided between an anode of a battery and a load and a second FET arranged between a cathode of the battery and the load, in which in a case where a current value that is larger than an abnormal current value indicating that a first drain current flowing through the first FET is an overcurrent and smaller than a maximum current value of the first drain current that can be tolerated by the first FET is set as a current limit value, a limiting gate voltage for setting the current value of the first drain current to a current limit value is applied to the second FET.
Claims4
A semiconductor switch control device comprising:
- a first semiconductor switch provided between an anode of a power supply and a load to conduct or block a current flowing from the power supply to the load;
- a second semiconductor switch provided between the load and a cathode of the power supply to regulate the current flowing from the load to the power supply according to an applied setting gate voltage and limit a current flowing through the first semiconductor switch;
- and
- a controller configured to control the first semiconductor switch and the second semiconductor switch, wherein
- in a case where a current value that is larger than an abnormal current value indicating that a first semiconductor input current which is the current flowing through the first semiconductor switch is an overcurrent and smaller than a maximum current value of a current which is larger than the abnormal current value and can be tolerated by the first semiconductor switch is set as a current limit value, the controller applies a limiting gate voltage for setting a current value of the first semiconductor input current to the current limit value as the setting gate voltage to the second semiconductor switch.
Dependencies are inferred from the claim text.