US 2018/0019573 A1 · SURFACE EMITTING LASER STRUCTURE

Abstract

A surface emitting laser with improved efficiency includes a conductive substrate, a metal bonding layer, a laser structure layer, an epitaxial semiconductor reflection layer, and an electrode layer. The laser structure layer has an epitaxial current-blocking layer having a current opening. Currents are only transmitting through the current opening. The epitaxial current-blocking layer is grown by a semiconductor epitaxy process to confine the range of the currents to form electric fields. Heat dissipation and electrical conduction properties are improved by the conductive substrate. Because the epitaxial current-blocking layer is not made by destructive manufacturing method, the efficiency of the surface emitting laser can be improved.

Claims20

Dependent claims

A surface emitting laser with improved efficiency, the surface emitting laser comprising:

a conductive substrate;
a metal bonding layer on an upper surface of the conductive substrate;
a laser structure layer on an upper surface of the metal bonding layer, wherein the laser structure layer has a first epitaxial current-blocking layer, and the first epitaxial current-blocking layer has a first current opening for current passing;
an epitaxial semiconductor reflection layer on an upper surface of the laser structure layer;
a first electrode layer on an upper surface of the epitaxial semiconductor reflection layer for packaging and electrical conduction;
wherein, the first epitaxial current-blocking layer is grown by a semiconductor epitaxy process, and a type of a semiconductor material of the first epitaxial current-blocking layer is different from a type of a semiconductor material of the laser structure layer.

3 more elements

A surface emitting laser with improved efficiency, the surface emitting laser comprising:

a conductive substrate;
a first epitaxial semiconductor reflection layer on an upper surface of the conductive substrate;
a laser structure layer on an upper surface of the first epitaxial semiconductor reflection layer, wherein the laser structure layer has a first epitaxial current-blocking layer, and the first epitaxial current-blocking layer has a first current opening for current passing;
a second epitaxial semiconductor reflection layer on an upper surface of the laser structure layer;
a first electrode layer on the upper surface of the laser structure layer for packaging and electrical conduction;
wherein, the first epitaxial current-blocking layer is grown by a semiconductor epitaxy process, and a type of a semiconductor material of the first epitaxial current-blocking layer is different from a type of a semiconductor material of the laser structure layer.

3 more elements

Dependencies are inferred from the claim text.

Surface emitting laser structure

Life of this patent

Surface emitting laser structure

Life of this patent

Abstract

Claims20