Graphene Compound, Method for Forming Graphene Compound, and Power Storage Device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsHiroshi KADOMA, Teppei OGUNI, Satoshi SEO
Life of this patent
Estimating the term…
Loading patent…
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsHiroshi KADOMA, Teppei OGUNI, Satoshi SEO
Estimating the term…
A material that can be used in a wide temperature range and a manufacturing method thereof are provided. A graphene compound has a substituted or unsubstituted chain group. The chain group has one or more ester groups or carboxyl groups and contains a Si atom. The chain group is bonded to a graphene layer through the Si atom. A method for forming a graphene compound includes a step of stirring graphene oxide and a Lewis base and a step of mixing a silicon compound having one or more ester groups or carboxyl groups into the mixed solution and stirring the obtained mixed solution. The Lewis base is butylamine, pentylamine, hexylamine, diethylamine, dipropylamine, dibutylamine, triethylamine, tripropylamine, or pyridine.
A graphene compound comprising:
A method for forming a graphene compound, comprising steps of:
A method for forming a graphene compound, comprising steps of:
Dependencies are inferred from the claim text.