N-type end-bonded metal contacts for carbon nanotube transistors

A method for manufacturing a semiconductor device, comprising:

• forming a first dielectric layer on a substrate;
• forming a carbon nanotube (CNT) layer on the first dielectric layer;
• forming a second dielectric layer on the carbon nanotube (CNT) layer;
• patterning a plurality of trenches in the second dielectric layer exposing corresponding first portions of the carbon nanotube (CNT) layer;
• forming a plurality of contacts respectively in the plurality of trenches on the exposed first portions of the carbon nanotube (CNT) layer;
• performing a thermal annealing process to create end-bonds between the plurality of contacts and the carbon nanotube (CNT) layer;
• wherein the first portions of the carbon nanotube layer beneath the plurality of contacts are entirely dissolved into the plurality of contacts to remove the first portions of the carbon nanotube layer from beneath the plurality of contacts;
• wherein second portions of the carbon nanotube (CNT) layer under the second dielectric layer remain after the thermal annealing process;
• wherein the end-bonds are formed between ends of the remaining second portions of the carbon nanotube (CNT) layer and ends of bottom portions of the plurality of contacts directly on the first dielectric layer in place of the dissolved first portions of the carbon nanotube (CNT) layer;
• wherein the ends of the remaining second portions of the carbon nanotube (CNT) layer are co-planar with sides of the second dielectric layer forming sides of the plurality of trenches;
• wherein the plurality of contacts comprise a metal which entirely dissolves the first portions of the carbon nanotube (CNT) layer during the thermal annealing process;
• wherein the thermal annealing process is performed at a temperature of less than about 1000° C.;
• and
• depositing a passivation layer on the plurality of contacts and the second dielectric layer.