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US 2018/0019419 A1Published application
Photo-patternable gate dielectrics for ofet
AssigneeCorning Incorporated
InventorsRobert Alan Bellman, Mingqian He, Timothy Edward Myers, Weijun Niu, David Neal Schissel, Kristi Lynn Simonton, Arthur Lawrence Wallace
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Abstract
Articles utilizing polymeric dielectric materials for gate dielectrics and insulator materials are provided along with methods for making the articles. The articles are useful in electronics-based devices that utilize organic thin film transistors.
Claims12
An article comprising:
- a. a substrate having a first surface and a second surface;
- b. an organic semiconductor layer;
- c. a gate, a source, and a drain electrode;
- d. a dielectric layer;
- and
- e. an encapsulation layer;
- wherein the encapsulation layer comprises a polymer:
- wherein A is an epoxide-containing monomer;
- B is second monomer;
- n is an integer of one or greater;
- m is an integer of one or greater;
- the ratio of n:m is from about 20:1 to about 1:20;
- and each R1 and R2 are independently, hydrogen, substituted or unsubstituted alkyl, substituted or unsubstituted aryl or heteroaryl, substituted or unsubstituted cycloalkyl, substituted or unsubstituted aralkyl, ester, alkoxy, thiol, thioalkyl, or halide;
- and Linker is a substituted or unsubstituted alkyl, substituted or unsubstituted aryl or heteroaryl, substituted or unsubstituted cycloalkyl, aralkyl, ester, ether, alkoxy, alkylthio, or thioalkyl.
11 more elements
Dependencies are inferred from the claim text.