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US 2018/0019394 A1Published application
Fabrication of correlated electron material devices with reduced interfacial layer impedance
AssigneeArm Limited
InventorsKimberly Gay Reid, Lucian Shifren
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Abstract
Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, processes are described, which may be useful in avoiding formation of a potentially resistive oxide layer at an interfacial surface between a conductive substrate, for example, and a correlated electron material.
Claims24
A method of constructing a switching device, comprising:
- forming a substrate from a first conductive material;
- exposing the substrate to at least a first agent to inhibit formation of an oxide layer at an interfacial surface of the substrate;
- and
- forming one or more layers of correlated electron material over the substrate.
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A method of fabricating a switching device, comprising:
- forming one or more layers of correlated electron material over a conductive substrate;
- forming one or more layers of conductive material over the one or more layers of correlated electron material;
- and
- inhibiting formation of an oxide layer at a first interfacial layer located over the conductive substrate, or at a second interfacial layer located over the one or more layers of correlated electron material or at the first interfacial layer and the second interfacial layer.
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A switching device, comprising:
- at least one layer of conductive material to form an electrode;
- and
- a correlated electron material over the at least one layer of conductive material at an interfacial layer, the interfacial layer to comprise a material to inhibit formation of an oxide of the correlated electron material and to inhibit formation of an oxide of the conductive material.
A switching device, comprising:
- a conductive substrate;
- a correlated electron material over the conductive substrate;
- a conductive material over the correlated electron material;
- a first interfacial layer between the conductive substrate and the correlated electron material;
- and
- a second interfacial layer between the correlated electron material and the conductive material over the correlated electron material, the first and second interfacial layers comprising a barrier to inhibit formation of oxides.
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Dependencies are inferred from the claim text.