Semiconductor memory device
AssigneeSamsung Electronics Co., Ltd.
InventorsJinwoo LEE, Jeonghee PARK, Dongho AHN, Zhe WU, Heeju SHIN, Ja bin LEE
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Abstract
A semiconductor memory device including first lines and second lines overlapping and intersecting each other, variable resistance memory elements disposed at intersections between the first lines and the second lines, and switching elements disposed between the variable resistance memory elements and the first lines. At least one of the switching elements includes first and second chalcogenide compound layers, and conductive nano-dots disposed between the first and second chalcogenide compound layers.
Claims20
A semiconductor memory device, comprising:
- first lines and second lines overlapping and intersecting each other;
- variable resistance memory elements disposed at intersections between the first lines and the second lines;
- and
- switching elements disposed between the variable resistance memory elements and the first lines,
- wherein at least one of the switching elements comprises:
- first and second chalcogenide compound layers;
- and
- conductive nano-dots disposed between the first and second chalcogenide compound layers.
A semiconductor memory device, comprising:
- first lines and second lines overlapping and intersecting each other;
- variable resistance memory elements disposed at intersections between the first lines and the second lines;
- and
- threshold switching elements disposed between the variable resistance memory elements and the first lines,
- wherein the threshold switching elements include conductive nano-dots.
A semiconductor memory device, comprising:
- first lines and second lines overlapping and intersecting each other, wherein the second lines are disposed above the first lines;
- variable resistance memory elements disposed at intersections between the first lines and the second lines;
- and
- switching elements disposed between the variable resistance memory elements and the first lines,
- wherein at least one of the switching elements comprises:
- first, second, and third chalcogenide compound layers;
- first conductive nano-dots disposed between the first and second chalcogenide compound layers;
- and
- second conductive nano-dots disposed between the second and third chalcogenide compound layers.
Dependencies are inferred from the claim text.