Selective device, memory cell, and storage unit
AssigneeSony Corporation
InventorsKAZUHIRO OHBA, MINORU IKARASHI
Life of this patent
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Abstract
A selective device includes a first electrode, a second electrode, a switch device, and a non-linear resistive device. The second electrode is disposed to face the first electrode. The switch device is provided between the first electrode and the second electrode. The non-linear resistive device contains one or more of boron (B), silicon (Si), and carbon (C). The non-linear resistive device is coupled to the switch device in series.
Claims17
A selective device comprising:
- a first electrode,
- a second electrode disposed to face the first electrode;
- a switch device provided between the first electrode and the second electrode;
- and
- a non-linear resistive device that contains one or more of boron (B), silicon (Si), and carbon (C), the non-linear resistive device being coupled to the switch device in series.
A memory cell provided with a memory device and a selective device coupled to the memory device, the selective device comprising:
- a first electrode;
- a second electrode disposed to face the first electrode;
- a switch device provided between the first electrode and the second electrode;
- and
- a non-linear resistive device that contains one or more of boron (B), silicon (Si), and carbon (C), the non-linear resistive device being coupled to the switch device in series.
A storage unit provided with a plurality of memory cells, the plurality of memory cells each including a memory device and a selective device coupled to the memory device, the selective device comprising:
- a first electrode;
- a second electrode disposed to face the first electrode;
- a switch device provided between the first electrode and the second electrode;
- and
- a non-linear resistive device that contains one or more of boron (B), silicon (Si), and carbon (C), the non-linear resistive device being coupled to the switch device in series.
Dependencies are inferred from the claim text.