Magnetoresistance effect element, magnetic memory device, manufacturing method, operation method, and integrated circuit

A magnetoresistance effect element, comprising:

• a bias layer made of a material containing at least one element selected from a first group consisting of Cr, Mn, Fe, Co, and Ni, and at least one element selected from a second group consisting of Ru, Rh, Pd, Ag, Os, Ir, Pt, and Au;
• a recording layer comprised of a ferromagnetic material and being disposed on the bias layer, a direction of magnetization of the recording layer being reversible;
• a barrier layer comprised of an insulator and being disposed on the recording layer;
• and
• a reference layer comprised of a ferromagnetic material and being disposed on the barrier layer, a direction of magnetization of the reference layer being substantially fixed.

A method of manufacturing a magnetoresistance effect element, comprising:

• preparing a laminate structure including:
• a bias layer comprised of an antiferromagnetic material and having a shape in which a first length in a first direction greater than a second length in a second direction perpendicular to the first direction;
• a recording layer comprised of a ferromagnetic material and being disposed on the bias layer;
• a barrier layer comprised of an insulator and being disposed on the recording layer;
• and a reference layer comprised of a ferromagnetic material and being disposed on the barrier layer;
• heat treating the laminate structure in a magnetic field;
• and
• patterning one of the layers in the laminate structure by lithography.