Semiconductor light emitting device

A semiconductor light emitting device, comprising:

• a multilayer semiconductor body including
• a first conductivity-type semiconductor layer,
• a second conductivity-type semiconductor layer,
• an active layer between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, and
• a recess passing through the second conductivity-type semiconductor layer and the active layer to expose the first conductivity-type semiconductor layer;
• a first electrode connected to the portion of the first conductivity-type semiconductor layer located on a bottom surface of the recess;
• a second electrode on the second conductivity-type semiconductor layer to be connected to the second conductivity-type semiconductor layer;
• a protective insulating layer on the second conductivity-type semiconductor layer to cover the second electrode;
• and
• an insulating spacer connected to the protective insulating layer and on an internal sidewall of the recess,
• wherein a normal inclination at an arbitrary point located on a lateral surface of the insulating spacer is increased or is not changed toward the bottom surface of the recess.

A semiconductor light emitting device, comprising:

• a multilayer semiconductor body including
• a first conductivity-type semiconductor layer,
• a second conductivity-type semiconductor layer,
• an active layer between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, and
• a recess passing through the second conductivity-type semiconductor layer and the active layer to expose a portion of the first conductivity-type semiconductor layer;
• a first electrode connected to the portion of the first conductivity-type semiconductor layer located on a bottom surface of the recess;
• a second electrode on the second conductivity-type semiconductor layer to be connected to the second conductivity-type semiconductor layer;
• a protective insulating layer on the second conductivity-type semiconductor layer to cover the second electrode;
• and
• an insulating spacer connected to the protective insulating layer and on an internal sidewall of the recess,
• wherein a contact region between the portion of the first conductivity-type semiconductor layer and the first electrode is greater than 50% of the bottom surface of the recess.