Method For Fabricating High-Efficiency Light Emitting Diode Having Light Emitting Window Electrode Structure

A method for fabricating a lateral light emitting diode device, the method comprising:

• sequentially stacking an n-type GaN layer, an activation layer, a p-type GaN layer, and a current spreading layer on a substrate;
• anisotropically etching and removing portions of the current spreading layer, the p-type GaN layer, the activation layer, and the n-type GaN layer by using a patterning process to form a MESA region;
• forming an insulating sidewall on a sidewall of an emission region including portions of the current spreading layer, the p-type GaN layer, the activation layer, and the n-type GaN layer;
• forming a seed layer on the n-type GaN layer exposed in the MESA region;
• growing a transparent window layer on the seed layer in a crystal state;
• forming a plurality of contact plugs to be in contact with the n-type GaN layer through the transparent window layer and the seed layer;
• forming an n-electrode on the transparent window layer to connect the plurality of contact plugs to each other;
• and
• forming a p-electrode on the current spreading layer.

A method for fabricating a lateral light emitting diode device, the method comprising:

• sequentially stacking an n-type GaN layer, an activation layer, a p-type GaN layer, and a current spreading layer on a substrate;
• anisotropically etching and removing portions of the current spreading layer, the p-type GaN layer, the activation layer, and the n-type GaN layer by using a patterning process to form a MESA region;
• depositing a transparent window layer on the substrate including the MESA region and forming the transparent window layer only in the MESA region by using a patterning process;
• forming a plurality of contact plugs to penetrate the transparent window layer;
• forming an n-electrode on the transparent window layer to connect the plurality of contact plugs to each other;
• and
• forming a p-electrode on the current spreading layer.