Iii-nitride semiconductor light emitting device and method of producing the same

A method of producing a III-nitride semiconductor light-emitting device, comprising:

• an n-type semiconductor layer formation step of forming an n-type semiconductor layer;
• a light emitting layer formation step of forming, on the n-type semiconductor layer, a light emitting layer which contains at least Al and has a quantum well structure constituted by a stack of well layers and barrier layers;
• an electron blocking layer formation step of forming, on the light emitting layer, an electron blocking layer having an Al content higher than that of the barrier layers;
• and
• a p-type semiconductor layer formation step of forming a p-type semiconductor layer on the electron blocking layer,
• wherein in the electron blocking layer formation step, a Si-based doped region layer is formed by doping with Si-containing impurities.

A III-nitride semiconductor light-emitting device including an n-type semiconductor layer;

• a light emitting layer containing at least Al;
• an electron blocking layer;
• and a p-type semiconductor layer in this order,
• wherein the light emitting layer has a quantum well structure constituted by a stack of well layers and barrier layers,
• the electron blocking layer is adjacent to the light emitting layer and is formed from a layer having an Al content higher than that of the barrier layers and the p-type semiconductor layer,
• the electron blocking layer includes a Si-based doped region layer, and
• the electron blocking layer further includes a p-type doped region layer closer to the light emitting layer than to the Si-based doped region layer.