Group iii nitride semiconductor light-emitting device and production method therefor

A method for producing a Group III nitride semiconductor light-emitting device, the method comprising:

• forming an n-type semiconductor layer on a substrate;
• forming a light-emitting layer on the n-type semiconductor layer;
• forming a p-type semiconductor layer on the light-emitting layer;
• wherein
• the forming an n-type semiconductor layer comprises
• forming an n-type contact layer;
• forming an n-side electrostatic breakdown preventing layer on the n-type contact layer;
• and
• forming an n-side superlattice layer on the n-side electrostatic breakdown preventing layer;
• wherein in the forming an n-side electrostatic breakdown preventing layer, a plurality of pits is generated from the n-side electrostatic breakdown preventing layer;
• in the forming an n-side superlattice layer, the layer is formed by alternately depositing a first InGaN layer, and a GaN layer or a second InGaN layer having an In composition ratio lower than that of the first InGaN layer, so that the In composition ratio and the total thickness of the first InGaN layers satisfy the following equation:
• 0<Y≦180X+22
• 0<X≦0.1
• X:
• In composition ratio of first InGaN layers
• Y:
• Total thickness of first InGaN layers (nm)