Optoelectronic semiconductor device and method for producing an optoelectronic semiconductor device

Method for producing an optoelectronic semiconductor device comprising the following method steps:

• forming a multiplicity of radiation-generating elements through epitaxial growth on a growth substrate,
• removing the growth substrate, such that root areas of the radiation-generating elements are exposed,
• arranging the multiplicity of radiation-generating elements on a surface of a carrier element, such that the root area of each of the radiation-generating elements adheres to the surface of the carrier element in each case in the region of a connection point, wherein
• each of the radiation-generating elements is arranged through the action of an electrical field in each case at a connection point on the surface of the carrier element.

Optoelectronic semiconductor device having a multiplicity of radiation-generating elements which are arranged spaced from one another on a surface of a carrier element, wherein each of the radiation-generating elements adheres to the surface of the carrier element in each case in the region of a connection point and wherein the optoelectronic semiconductor device is free of a growth substrate, wherein

• the optoelectronic semiconductor device comprises a first multiplicity of radiation-generating elements of a first type and a second multiplicity of radiation-generating elements of a second type, wherein the radiation-generating elements of the first type are configured to generate electromagnetic radiation of a first wavelength range, and wherein the radiation-generating elements of the second type are configured to generate electromagnetic radiation of a second wavelength range different from the first wavelength range, and
• the carrier element comprises separately controllable conductor tracks, which are each associated with one type of radiation-generating element, wherein
• each of the radiation-generating elements is attached to the surface of the carrier element through interaction of a key element arranged on a root area of the radiation-generating element and a lock element arranged in the region of the connection point, and
• the radiation-generating elements of the first type and the radiation-generating elements of the second type have differently configured key elements, wherein the lock elements of a first type and a second type are respectively of complementary configuration to the key elements.