Led having vertical contacts redistributed for flip chip mounting

A light-emitting device, comprising:

• a first semiconductor structure including a first n-type layer, a first p-type layer, and a first active layer disposed between the first n-type layer and the first p-type layer;
• a second semiconductor structure including a second n-type layer, a second p-type layer, and a second active layer disposed between the second n-type layer and the second p-type layer;
• a first metal layer including a first portion and a second portion that is electrically insulated from the first portion, the first portion being electrically coupled to the first n-type layer and the second portion being electrically coupled to the second n-type layer;
• and
• a first shunt electrically coupling the first p-type layer to the second portion of the first metal layer;
• a second metal layer that is disposed adjacently to the first metal layer;
• and
• a second shunt electrically coupling the second p-type layer to the second metal layer.

A light-emitting device, comprising:

• a first semiconductor structure including a first n-type layer, a first p-type layer, and a first active layer disposed between the first n-type layer and the first p-type layer;
• a second semiconductor structure including a second n-type layer, a second p-type layer, and a second active layer disposed between the second n-type layer and the second p-type layer;
• a first metal layer including a first portion and a second portion that is electrically insulated from the first portion, the first portion being electrically coupled to the first p-type layer and the second portion being electrically coupled to the second p-type layer;
• and
• a first shunt electrically coupling the first n-type layer to the second portion of the first metal layer;
• a second metal layer that is disposed adjacently to the first metal layer;
• and
• a second shunt electrically coupling the second n-type layer to the second metal layer.

A method, comprising:

• forming a first semiconductor structure and a second semiconductor structure, each of the first semiconductor structure and the second semiconductor structure including a respective first conductivity layer, a respective second conductivity layer, and a respective active layer disposed between the respective first conductivity layer and the respective second conductivity layer;
• forming a first metal layer including a first portion and a second portion that is electrically insulated from the first portion, the first portion being electrically coupled to the respective first conductivity layer of the first semiconductor structure and the second portion being coupled to the respective first conductivity layer of the second semiconductor structure;
• forming a first shunt that is configured to electrically couple the respective second conductivity layer of the first portion to the second portion of the first metal layer;
• forming a second metal layer adjacently to the first metal layer;
• and
• forming a second shunt that is configured to electrically couple the second respective conductivity layer of the second semiconductor structure to the second metal layer.