Photoelectric conversion device, manufacturing method for photoelectric conversion device, and photoelectric conversion module

A method for manufacturing a photoelectric conversion device, the method comprising:

• preparing a second photoelectric conversion unit comprising a light absorbing layer;
• forming a first photoelectric conversion unit by providing, in the following order, an electron transporting layer, a light absorbing layer and a hole transporting layer, on the second photoelectric conversion unit;
• and
• forming a transparent electroconductive layer on the hole transporting layer in the first photoelectric conversion unit,
• wherein a bandgap of the light absorbing layer in the second photoelectric conversion unit is narrower than a bandgap of the light absorbing layer in the first photoelectric conversion unit,
• wherein the light absorbing layer in the first photoelectric conversion unit comprises a photosensitive material of perovskite-type crystal structure represented by general formula RNH3MX3 or HC(NH2)2MX3, wherein R is an alkyl group, M is a divalent metal ion, and X is a halogen,
• wherein a product of a resistivity ρ and a thickness t of the hole transporting layer in the first photoelectric conversion unit satisfies ρt≧0.1 μΩ·m2, and
• wherein the transparent electroconductive layer is in contact with the hole transporting layer.