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US 2018/0019344 A1Published application
Thin film transistor, array substrate and display device having the same, and method of manufacturing thereof
AssigneeBoe Technology Group Co., Ltd.
InventorLiangchen Yan
Life of this patent
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Abstract
The disclosure provides a method of manufacturing a thin film transistor on a base substrate by patterning an active layer comprising a metal oxynitride, and treating the active layer with a plasma comprising oxygen.
Claims13
1-14. (canceled)
A thin film transistor comprising an active layer comprising a metal oxynitride, a source electrode, and a drain electrode;
- wherein the active layer is partially covered by an etching stop layer on top of the active layer;
- the active layer has a first region contacting the etching stop layer, a second region contacting the source electrode, and a third region contacting the drain electrode;
- and
- the first region has an oxygen content lower than that of at least one of the second region and the third region.
1 more element
Dependencies are inferred from the claim text.