Method for reducing contact resistance in semiconductor structures
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJean-Pierre COLINGE, Carlos H. Diaz
Life of this patent
Estimating the term…
Abstract
Semiconductor structures and methods reduce contact resistance, while retaining cost effectiveness for integration into the process flow by introducing a heavily-doped contact layer disposed between two adjacent layers. The heavily-doped contact layer may be formed through a solid-phase epitaxial regrowth method. The contact resistance may be tuned by adjusting dopant concentration and contact area configuration of the heavily-doped epitaxial contact layer.
Claims25
1-15. (canceled)
A structure comprising;
- a fin over a substrate;
- a gate structure, on the fin, having a sidewall;
- a sidewall spacer adjacent to the sidewall;
- a source/drain (S/D) region adjacent to the sidewall spacer;
- and
- a layer of doped crystalline material disposed on the S/D region, wherein the layer of doped crystalline material comprises a higher doping concentration than a doping concentration of the S/D region.
A structure comprising;
- a fin, over a substrate, having a top surface and a pair of opposing side surfaces;
- a gate structure, on the fin, having a sidewall;
- a sidewall spacer adjacent to the sidewall;
- a source/drain (S/D) region in the fin and adjacent to the sidewall spacer, a portion of the source/drain (S/D) region being disposed in the fin;
- and
- a layer of doped crystalline material on the S/D region and formed on the side surface of the fin, wherein the layer of doped crystalline material comprises a higher doping concentration than a doping concentration of the S/D region.
(canceled)
(canceled)
(canceled)
A semiconductor structure comprising:
- a fin on a substrate;
- a first gate structure, over the fin, with a first sidewall and a first spacer formed thereon;
- a second gate structure, over the fin, with a second sidewall and a second spacer formed thereon, the second spacer opposing the first spacer;
- a crystalline source/drain (S/D) region formed in the fin and between the first spacer and the second spacer;
- and
- crystalline layer formed on the crystalline S/D region, wherein the crystalline layer comprises a higher doping concentration than a doping concentration of the crystalline S/D region.
(canceled)
Dependencies are inferred from the claim text.