Graded and stepped epitaxy for constructing power circuits and devices
AssigneeGlobal Power Technologies Group, Inc.
InventorRahul Radhakrishnan
Life of this patent
Estimating the term…
Abstract
An exemplary doping profile for an epitaxial layer reduces the on-state resistance (RON) and off-state capacitance (CD). A reduction in on-state resistance improves the forward voltage drop (VF). Compared to constant epitaxial doping, non-uniform doping of the epitaxial layer can optimize trade-offs between on-state resistance (RON) and off-state capacitance (CD), and off-state blocking of power devices. In some embodiments, the doping profile for the epitaxial layer may be graded or gradual. In some embodiments, the doping profile for the epitaxial layer may be a stepped or a stepwise function.
Claims17
A semiconductor device, comprising:
- a doped substrate;
- a buffer layer formed over the doped substrate, wherein the buffer layer is doped to exhibit a buffer doping profile;
- and
- an epitaxial layer formed over the buffer layer, wherein the epitaxial layer is doped to exhibit a spatially varying epitaxial doping profile.
A semiconductor device, comprising:
- a substrate;
- and
- an epitaxial layer formed over the substrate, wherein the epitaxial layer is doped according to an epitaxial doping profile.
Dependencies are inferred from the claim text.