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US 2018/0019332 A1Published application
Guard rings for cascode gallium nitride devices
AssigneeSemiconductor Components Industries, LLC
InventorsWoochul JEON, Chun-Li LIU, Ali SALIH
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Abstract
Implementations of semiconductor devices may include: a plurality of drain fingers and a plurality of source fingers interdigitated with one another; at least one gate; and at gate bus formed to completely surround the plurality of drain fingers and the plurality of source fingers; wherein the gate bus is mechanically and electrically coupled to the at least one gate.
Claims10
A semiconductor device consisting of:
- a plurality of drain fingers in a drain region and a plurality of source fingers in a source region, wherein the drain region and the source region are fully interdigitated with one another;
- at least one gate;
- and
- a gate bus formed to completely surround the plurality of drain fingers and source fingers;
- wherein a portion of the gate bus is adjacent to and electrically coupled with the at least one gate.
2 more elements
A semiconductor device comprising:
- a depletion mode (D-mode) transistor comprising one or more source fingers, one or more drain fingers and one or more gates;
- and
- a gate bus surrounding the one or more source fingers and one or more drain fingers of the D-mode transistor;
- wherein a portion of the gate bus is adjacent to the one or more gates of the D-mode transistor;
- and
- wherein the gate bus is a first guard ring of the D-mode transistor.
3 more elements
Dependencies are inferred from the claim text.