Lateral bipolar junction transistor with controlled junction

A method of forming a lateral bipolar junction transistor (LBJT) comprising:

• providing a germanium containing layer bonded to a crystalline oxide layer;
• patterning the germanium containing layer stopping on the crystalline oxide layer to form a base region;
• forming emitter and collector extension regions on opposing sides of the base region using ion implantation;
• and
• epitaxially forming an emitter region and collector region on the crystalline oxide layer into contact with the emitter and collector extension regions.

A method of forming a lateral bipolar junction transistor (LBJT) comprising:

• providing a germanium containing layer on a crystalline oxide layer;
• forming an extrinsic base region on the germanium containing layer;
• forming a spacer on the sidewalls of the extrinsic base region;
• etching the germanium containing layer using the extrinsic base region and said spacer as a mask with an etch that is selective to the crystalline oxide layer to form a base region;
• forming emitter and collector extension regions on opposing sides of the base region using angled ion implantation;
• and
• epitaxially forming an emitter region and collector region on the crystalline oxide layer into contact with the emitter and collector extension regions.