Bipolar transistor on high-resistivity substrate
AssigneeSkyworks Solutions, Inc.
InventorMichael Joseph McPartlin
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Abstract
Systems and methods are disclosed for fabricating a semiconductor die that includes one or more bipolar transistors disposed on or above a high-resistivity region of a substrate. The substrate may include, for example, bulk silicon, at least a portion of which has high-resistivity characteristics. For example, the bulk substrate may have a resistivity greater than 500 Ohm*cm, such as around 1 kOhm*cm. In certain embodiments, one or more of the bipolar devices are surrounded by a low-resistivity implant configured to reduce effects of harmonic and other interference.
Claims20
A method of fabricating a semiconductor die comprising:
- forming a bulk silicon substrate having a high-resistivity portion;
- forming a silicon-germanium bipolar transistor on the bulk silicon substrate, the silicon-germanium bipolar transistor configured as a power amplifier, the bulk silicon substrate including a low-resistivity well at least partially surrounding the silicon-germanium bipolar transistor, the bulk silicon substrate further including a trench disposed adjacent to the low-resistivity well;
- integrating a front-end module on the high-resistivity bulk silicon substrate, the front-end module including the power amplifier, a switch, and a plurality of filters;
- and
- forming a complementary metal oxide semiconductor field-effect transistor device on the bulk silicon substrate.
A method of fabricating a semiconductor die comprising:
- forming a substrate having a high-resistivity portion;
- forming a silicon-germanium bipolar transistor on the substrate, the silicon-germanium bipolar transistor configured as a power amplifier, the substrate including a low-resistivity well at least partially surrounding the silicon-germanium bipolar transistor, the substrate further including a trench disposed adjacent to the low-resistivity well;
- forming a number of active devices on the substrate, the active devices including the power amplifier, a switch, and a plurality of filters;
- and
- forming at least one additional transistor of a different material than the silicon-germanium bipolar transistor on the substrate.
Dependencies are inferred from the claim text.