Finfet device including a stem region of a fin element
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJean-Pierre COLINGE, Kuo-Cheng CHING, Zhiqiang WU
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Abstract
A finFET device having a substrate and a fin disposed on the substrate. The fin includes a passive region, a stem region overlying the passive region, and an active region overlying the stem region. The stem region has a first width and the active region has a second width. The first width is less than the second width. The stem region and the active region also have different compositions. A gate structure is disposed on the active region.
Claims20
A fin-type field effect transistor (finFET), comprising:
- a substrate;
- a fin disposed on the substrate, wherein the fin includes a passive region, a stem region overlying the passive region, and an active region overlying the stem region, wherein the stem region has a first width and the active region has a second width, the first width being less than the second width;
- and wherein the stem region has a first composition and the active region has a second composition, the second composition being different than the first composition;
- and
- a gate structure disposed on the active region.
A fin-type field effect transistor (finFET), comprising:
- a fin disposed on the substrate and abutting a shallow trench isolation (STI) feature, wherein the fin includes:
- a passive region,
- a stem region having a first region and a second region each overlying the passive region, and
- an active region overlying the stem region, wherein the first region of the stem region has a first width and extends above an uppermost surface of the STI and the second region of the stem region has a second width and extends below the uppermost surface of the STI, the first width less than the second width;
- and
- a gate structure including a metal gate electrode over and aligned with the stem region and the passive region, wherein at least a portion of the gate structure is coplanar with the first region of the stem region of the fin.
A fin-type field effect transistor (FinFET), comprising:
- a fin having a stem portion comprising silicon germanium (SiGe) and an active layer comprising silicon (Si), wherein the active layer is over the stem portion;
- a gate structure disposed over the fin and interfacing the active region and the stem portion;
- a source/drain feature adjacent the gate structure, wherein the stem portion extends at least partially under the source/drain feature.
Dependencies are inferred from the claim text.