Semiconductor device manufacturing method

Abstract

In case of performing annealing at a temperature of 1300° C. or higher, it is not possible to sufficiently suppress escape of nitrogen from a GaN layer even if a cap layer is provided thereon. Thereby, the front surface of the GaN layer is roughened. A semiconductor device manufacturing method of manufacturing a semiconductor device having a nitride semiconductor layer is provided. The semiconductor device manufacturing method includes: implanting, into a predetermined region of the nitride semiconductor layer, n-type or p-type impurities relative to the nitride semiconductor layer; forming, by atomic layer deposition, a first protective film containing a nitride on and in direct contact with at least the predetermined region; and annealing the nitride semiconductor layer and the first protective film at a temperature of 1300° C. or higher.

Dependencies are inferred from the claim text.