Semiconductor devices having 3d channels, and methods of fabricating semiconductor devices having 3d channels

A semiconductor device, comprising:

• a substrate having first and second trenches, and first, second and third fins longitudinally aligned in a first direction, wherein the first trench extends between the first and second fins, and the second trench extends between the second and third fins;
• a first portion of field insulating material disposed in the first trench as interposed between the first and second fins, and a second portion of field insulating material disposed in the second trench as interposed between the second and third fins, wherein an upper surface of the second portion of the field insulating material is recessed in the second trench at a level below uppermost surfaces of the second and third fins;
• a plurality of active gates disposed on the first, second and third fins;
• a first dummy gate disposed on an upper surface of the first portion of the field insulating material and aligned in the first direction with the first trench and the first portion of the field insulating material;
• and
• a second dummy gate at least partially extending into the second trench to the upper surface of the second portion of the field insulating material and offset in the first direction with respect to the second trench and the second portion of the field insulating material.