N-channel bipolar power semiconductor device with p-layer in the drift volume

A bipolar power semiconductor device having a semiconductor body configured to conduct a load current between a first load terminal and a second load terminal of the power semiconductor device, the bipolar power semiconductor device further comprising:

• a source region of a first conductivity type and being electrically connected to the first load terminal;
• a semiconductor channel region implemented in the semiconductor body and having a second conductivity type and separating the source region from a remaining portion of the semiconductor body;
• a control electrode that is insulated from the semiconductor body by an insulator, wherein the control electrode is configured to control a path of the load current in the semiconductor channel region;
• at least one emitter region of the second conductivity type implemented in the semiconductor body and being electrically connected to the second load terminal;
• wherein the semiconductor body further comprises:
• a drift volume having at least a first drift region being coupled with the semiconductor channel region and having the second conductivity type;
• a buffer region of the first conductivity type and being arranged between the drift volume of the semiconductor body on one side and the emitter region on the other side,
• wherein the first drift region has a total extension along an extension direction of at least 5% of the total extension of the semiconductor body along the extension direction.

A method of processing a bipolar power semiconductor device having a semiconductor body, the method comprising:

• creating a source region of a first conductivity type;
• creating a semiconductor channel region in the semiconductor body with a second conductivity type such that the semiconductor channel region separates the source region from a remaining portion of the semiconductor body;
• providing a control electrode for controlling a path of a load current in the semiconductor channel region, and an insulator that insulates the control electrode from the semiconductor body;
• creating at least one emitter region of the second conductivity type in the semiconductor body;
• creating a drift volume having at least a first drift region in the semiconductor body with the second conductivity type such that the first drift region is coupled with the semiconductor channel region;
• creating a buffer region of the first conductivity type and being arranged between the drift volume of the semiconductor body on one side and the emitter region on the other side;
• wherein the first drift region has a total extension along an extension direction of at least 5% of the total extension of the semiconductor body along the extension direction.