US 2018/0019318 A1 · METHOD OF FORMING SEMICONDUCTOR DEVICE INCLUDING P-N DIODE

Abstract

Forming a semiconductor device includes forming a first conductive line on a substrate, forming a memory cell including a switching device and a data storage element on the first conductive line, and forming a second conductive line on the memory cell. Forming the switching device includes forming a first semiconductor layer, forming a first doped region by injecting a n-type impurity into the first semiconductor layer, forming a second semiconductor layer thicker than the first semiconductor layer, on the first semiconductor layer having the first doped region, forming a second doped region by injecting a p-type impurity into an upper region of the second semiconductor layer, and forming a P-N diode by performing a heat treatment process to diffuse the n-type impurity and the p-type impurity in the first doped region and the second doped region to form a P-N junction of the P-N diode in the second semiconductor layer.

Claims20

Dependent claims

A method of forming a semiconductor device, the method comprising:

forming a first conductive line on a substrate;
forming a memory cell including a switching device and a data storage element on the first conductive line;
and
forming a second conductive line on the memory cell,
wherein forming the switching device includes:
forming a first semiconductor layer;
forming a first doped region using a first doping process of injecting a n-type impurity into the first semiconductor layer;
forming a second semiconductor layer to be thicker than the first semiconductor layer, on the first semiconductor layer having the first doped region;
forming a second doped region using a second doping process of injecting a p-type impurity into an upper region of the second semiconductor layer;
and
forming a P-N diode by performing a heat treatment process to diffuse the n-type impurity and the p-type impurity in the first doped region and the second doped region such that a P-N junction of the P-N diode is formed in the second semiconductor layer.

8 more elements

A method of forming a semiconductor device, the method comprising:

forming a first semiconductor layer on a lower conductive layer, the first semiconductor layer being formed of a first undoped silicon layer;
forming a first doped region including an n-type impurity in the first semiconductor layer using a first doping process;
forming a second semiconductor layer to be thicker than the first semiconductor layer, on the first semiconductor layer including the first doped region, the second semiconductor layer being formed of a second undoped silicon layer;
forming a second doped region including a p-type impurity in an upper region of the second semiconductor layer using a second doping process;
and
forming a P-N diode in which a P-N junction is formed in the second semiconductor layer by performing a heat treatment process to diffuse the n-type impurity and the p-type impurity in the first doped region and the second doped region.

3 more elements

A method of forming a semiconductor device, the method comprising:

forming a first layer of undoped silicon on a first conductive layer;
forming a first doped region including an n-type impurity in the first layer to form a first semiconductor layer;
forming a second layer of undoped silicon on the first semiconductor layer including the first doped region;
forming a second doped region including a p-type impurity in an upper region of the second layer to form a second semiconductor layer;
performing a heat treatment process to diffuse the n-type impurity and the p-type impurity in the first doped region and the second doped region to form a first P-N diode including a first P-N junction in the second semiconductor layer;
forming a first electrode layer on the first P-N diode;
forming a first data storage element on the first electrode layer;
forming a second electrode layer on the first data storage element;
and
forming an second conductive layer on the second electrode layer.

7 more elements

Dependencies are inferred from the claim text.

Method of forming semiconductor device including p-n diode

Life of this patent

Method of forming semiconductor device including p-n diode

Life of this patent

Abstract

Claims20