Semiconductor device based on wideband gap semiconductor materials

A semiconductor device, including:

• a transistor region having a gate region and a source region formed on a side of the gate region, the gate region including a gate formed over a first doping region, a second doping region, and a junction field effect transistor (JFET) region formed between the first doping region and the second doping region;
• and
• a diode region formed over the second doping region and a third doping region, the diode region including an Ohmic contact formed over the second doping region and the third doping region and a Schottky contact formed over an area between the second doping region and the third doping region;
• and
• a termination region surrounding the diode region and the transistor region.

A semiconductor device, including:

• a semiconductor substrate doped with a first-type conductivity with a first concentration;
• a drift region formed over the semiconductor substrate and has the first-type conductivity with a second concentration smaller than the first concentration, the drifting region including a first area and a second area that are adjacent each other;
• doping regions formed in the drift region to be spaced apart from one another, each doping region including a p-well region;
• a gate formed over the first area of the drift region;
• and
• a Schottky contact formed over the second area of the drift region, and
• wherein the doping region further includes heavily doped regions over the p-well regions such that a particular heavily doped region has the first-type conductivity or a second-type conductivity different from the first-type conductivity depending on whether the particular heavily doped region is located in the first area or the second area.