Semiconductor Device Including a Super Junction Structure in a SiC Semiconductor Body

A semiconductor device, comprising:

• a body region of a first conductivity type in a SiC semiconductor body of a second conductivity type;
• and
• a super junction structure in the SiC semiconductor body, and comprising a drift zone section of the second conductivity type and a compensation structure of the first conductivity type,
• wherein the compensation structure adjoins the body region and includes compensation sub-structures consecutively arranged along a vertical direction perpendicular to a surface of the SiC semiconductor body,
• wherein the compensation sub-structures include a first compensation sub-structure and a second compensation sub-structure,
• wherein an average doping concentration along a vertical extension of the first compensation sub-structure is at least five times larger than an average doping concentration along a vertical extension of the second compensation sub-structure.

A semiconductor device, comprising:

• a body region of a first conductivity type in a SiC semiconductor body of a second conductivity type;
• and
• a super junction structure in the SiC semiconductor body, and comprising a drift zone section of the second conductivity type and a compensation structure of the first conductivity type,
• wherein the compensation structure adjoins the body region and includes compensation sub-structures consecutively arranged along a vertical direction perpendicular to a surface of the SIC semiconductor body,
• wherein the compensation sub-structures include a first compensation sub-structure and a second compensation sub-structure,
• wherein a width of the first compensation sub-structure is at least five times larger than a width of the second compensation sub-structure.

A semiconductor device, comprising:

• a body region of a first conductivity type in a SiC semiconductor body of a second conductivity type;
• and
• a super junction structure in the SiC semiconductor body, and comprising a drift zone section of the second conductivity type and a compensation structure of the first conductivity type,
• wherein the compensation structure adjoins the body region and includes compensation sub-structures consecutively arranged along a vertical direction perpendicular to a surface of the SiC semiconductor body,
• wherein the compensation sub-structures include a first compensation sub-structure and a second compensation sub-structure,
• wherein the first compensation sub-structure includes a plurality of elongated first semiconductor regions extending in parallel along a first lateral direction,
• wherein the second compensation sub-structure includes a plurality of second semiconductor regions spaced. apart from one another along the first lateral direction.