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AssigneeInternational Business Machines Corporation
InventorsMartin M. Frank, Hiroyuki Miyazoe, Vijay Narayanan
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A tapered metal nitride structure having a gentle sloping (i.e., tapered) sidewall is provided that includes an oxygen rich metal nitride portion located between each metal nitride portion of a stack of metal nitride portions. The structure is formed by incorporating/introducing oxygen into an upper portion of a first metal nitride layer to form an oxygen rich metal nitride surface layer. A second nitride is then formed atop the oxygen rich metal nitride surface layer. The steps of oxygen incorporation/addition and nitride layer formation may be repeated any number of times. An etch mask is then provided and thereafter a sputter etch is performed to provide the tapered metal nitride structure. The tapered metal nitride structure may be used as an electrode in a semiconductor device.
A semiconductor structure comprising:
(canceled)
A method of forming a semiconductor structure, said method comprises:
A semiconductor structure comprising:
Dependencies are inferred from the claim text.