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US 2018/0019298 A1Published application
METHOD FOR FORMING PATTERNED TANTALUM NITRIDE (TaN) RESISTORS ON DIELECTRIC MATERIAL PASSIVATION LAYERS
AssigneeRaytheon Company
InventorsKiuchul Hwang, Robert T. Soter, Bruce Leblanc, Adrian D. Williams
Life of this patent
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Abstract
A structure having: a substrate; a passivation layer disposed over a surface of substrate; an etch stop layer disposed on the passivation layer; resistor comprising tantalum nitride, disposed on the etch stop layer. The etch stop layer has an etch rate at least 100 times slower than an etch rate of the tantalum nitride to a predetermined etchant.
Claims17
A structure, comprising:
- a substrate;
- a passivation layer disposed over a surface of the substrate.
- an etch stop layer disposed over the passivation layer;
- a resistor comprising tantalum nitride disposed over the etch stop layer;
- and
- wherein etch stop layer has an etch rate at least 100 times slower than an etch rate of the tantalum nitride to a predetermined etchant.
3 more elements
A structure, comprising:
- a substrate;
- a passivation layer disposed over a surface of the substrate.
- an etch stop layer disposed over the passivation layer;
- a resistor comprising tantalum nitride disposed over the etch stop layer.
1 more element
A method, comprising:
- providing a semiconductor substrate;
- forming a dielectric passivation layer on the substrate;
- forming an etch stop on the passivation dielectric layer
- depositing an electrically resistive material comprising tantalum nitride (TaN) on the etch stop layer;
- forming mask over a selected portion of the electrically resistive material, the mask exposing unselected portions of the electrically resistive material;
- exposing the mask and the unselected portions of the electrically resistive material to an etchant, to etch away the unselected portions of the electrically resistive material while remaining unetched the selected portion of the electrically resistive material disposed under the mask, the etching stopping at the etch stop layer;
- and,
- removing the mask.
5 more elements
Dependencies are inferred from the claim text.