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US 2018/0019292 A1Published application
Element substrate and light-emitting device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsMitsuaki OSAME, Aya ANZAI, Yu YAMAZAKI, Ryota FUKUMOTO
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Abstract
A potential of a gate of a driving transistor is fixed, and the driving transistor is operated in a saturation region, so that a current is supplied thereto anytime. A current control transistor operating in a linear region is disposed serially with the driving transistor, and a video signal for transmitting a signal of emission or non-emission of the pixel is input to a gate of the current control transistor via a switching transistor.
Claims7
(canceled)
A light-emitting device comprising:
- a semiconductor film;
- a gate insulating film over the semiconductor film;
- a first gate electrode over the gate insulating film;
- a second gate electrode over the gate insulating film;
- a first insulating film over the first gate electrode and the second gate electrode, the first insulating film comprising a first contact hole and a second contact hole;
- a first conductive film over the first insulating film;
- a second conductive film over the first insulating film;
- a second insulating film over the first conductive film and the second conductive film, the second insulating film comprising a third contact hole;
- and
- a light-emitting element over the second insulating film,
- wherein the semiconductor film comprises a first region, a second region, a third region and a fourth region,
- wherein the first region is electrically connected to the first conductive film through the first contact hole,
- wherein the second region is electrically connected to the second conductive film through the second contact hole,
- wherein the second conductive film is electrically connected to the light-emitting element through the third contact hole,
- wherein the first gate electrode overlaps an entirety of the third region,
- wherein the second gate electrode overlaps entirety of the fourth region,
- wherein the third region comprises a winding portion,
- wherein a first transistor comprises the third region is configured to operate in a saturation area when the light-emitting element emits light, and
- wherein a second transistor comprises the fourth region is configured to operate in a linear area when the light-emitting element emits light.
16 more elements
A light-emitting device comprising:
- a semiconductor film;
- a gate insulating film over the semiconductor film;
- a first gate electrode over the gate insulating film;
- a second gate electrode over the gate insulating film;
- a first insulating film over the first gate electrode and the second gate electrode, the first insulating film comprising a first contact hole and a second contact hole;
- a first conductive film over the first insulating film;
- a second conductive film over the first insulating film;
- a second insulating film over the first conductive film and the second conductive film, the second insulating film comprising a third contact hole;
- and
- a light-emitting element over the second insulating film,
- wherein the semiconductor film comprises a first region, a second region, a third region and a fourth region,
- wherein the first region is electrically connected to the first conductive film through the first contact hole,
- wherein the second region is electrically connected to the second conductive film through the second contact hole,
- wherein a power line comprises the first conductive film,
- wherein the first conductive film overlaps the first gate electrode and the third region,
- wherein the second conductive film is electrically connected to the light-emitting element through the third contact hole,
- wherein the first gate electrode overlaps an entirety of the third region,
- wherein the second gate electrode overlaps entirety of the fourth region,
- wherein the third region comprises a winding portion,
- wherein a first transistor comprises the third region is configured to operate in a saturation area when the light-emitting element emits light, and
- wherein a second transistor comprises the fourth region is configured to operate in a linear area when the light-emitting element emits light.
18 more elements
Dependencies are inferred from the claim text.