Variable resistance memory devices and methods of fabricating the same

A method of fabricating a variable resistance memory device, the method comprising:

• forming a first conductive line extending on a substrate, the first conductive line extending in a first direction;
• forming a memory cell on the first conductive line, forming the memory cell including forming a switching element and a variable resistance structure coupled in series, the switching element including at least one insulative impurity and a chalcogenide material;
• and
• forming a second conductive line on the memory cell and extending in a second direction that intersects the first direction, such that the memory cell is electrically coupled to both the first conductive line and the second conductive line.

A device, comprising:

• a memory cell configured to be electrically coupled to separate conductive lines at opposite ends, the memory cell including,
• a variable resistance structure configured to reversibly switch phases, between a crystalline state and an amorphous state, at a first phase transition temperature, and
• a switching element configured to reversibly switch phases, between a crystalline state and an amorphous state, at a second phase transition temperature,
• wherein the second phase transition temperature is greater than the first phase transition temperature, and
• wherein the switching element includes at least one insulative impurity and a chalcogenide material.