# US 2018/0019276 A1 · Solid-state imaging device and manufacturing method of the same, and electronic apparatus

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- Number: US 2018/0019276 A1
- Document ID: US20180019276A1
- Status: Published application
- Kind: A1
- Application number: 15/719,179
- Filed: 2017-09-28
- Published: 2018-01-18
- Earliest claimed: 2012-01-23
- Assignees: Sony Corporation
- Applicants: Sony Corporation
- Inventors: Yuki Miyanami
- Web page: https://patentgrep.com/patent/US20180019276A1

## CPC

- H10F 39/8057: {Optical shielding}
- H04N 23/54: Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
- H04N 25/616: involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
- H04N 25/75: Circuitry for providing, modifying or processing image signals from the pixel array
- H10F 39/014: {of CMOS image sensors}
- H10F 39/024: {of coatings or optical elements}
- H10F 39/18: Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F 39/182: {Colour image sensors}
- H10F 39/199: {Back-illuminated image sensors}
- H10F 39/805: {Coatings}
- H10F 39/8053: {Colour filters}
- H10F 39/8063: {Microlenses}
- H10F 39/807: {Pixel isolation structures}
- H10F 39/811: {Interconnections}
- H10F 39/812: {Arrangements for transferring the charges in the image sensor perpendicular to the imaging plane, e.g. buried regions used to transfer generated charges to circuitry under the photosensitive region}
- H10F 39/813: {Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels}
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION

## Abstract

The present disclosure relates to a solid-state imaging device and a manufacturing method of the same, and an electronic apparatus, capable of more reliably suppressing occurrence of color mixing. A trench is formed between PDs so as to be opened to a light receiving surface side of a semiconductor substrate on which a plurality of the PDs, each of which receives light to generate charges, are formed, an insulating film is embedded in the trench and the insulating film is laminated on a back surface side of the semiconductor substrate. Then, a light shielding portion is formed so as to be laminated on the insulating film and to have a convex shape protruding to the semiconductor substrate at a location corresponding to the trench. The present technology can be applied to a back surface irradiation type CMOS solid-state imaging device.

## Claims

### Claim 1

An imaging device, comprising:
a semiconductor substrate including:
first and second photoelectric conversion units, and
a trench disposed between the first photoelectric conversion unit and the second photoelectric conversion unit;
an insulating film disposed at a light-receiving side of the semiconductor substrate; and
a light-shielding portion,
wherein,
the first photoelectric conversion unit is adjacent to the second photoelectric conversion unit,
a light-incident side of the insulating film includes a concave portion at a location corresponding to the trench, and
the light-shielding portion is disposed above the concave portion of the insulating film.

### Claim 2 (depends on 1)

The imaging device of claim 1, wherein the insulating film is embedded in the trench.

### Claim 3 (depends on 1)

The imaging device of claim 1, wherein the concave portion of the insulating film is disposed between the first photoelectric conversion unit and the second photoelectric conversion unit.

### Claim 4 (depends on 1)

The imaging device of claim 1, further comprising:
a plurality of transistors, wherein the first and second photoelectric conversion units share at least one transistor included in the plurality of transistors.

### Claim 5 (depends on 4)

The imaging device of claim 4, wherein the at least one shared transistor includes a reset transistor positioned to allow charge to be selectively discharged from a floating diffusion to a circuit node.

### Claim 6 (depends on 4)

The imaging device of claim 4, wherein the at least one shared transistor includes an amplification transistor coupled to a floating diffusion to allow a signal corresponding to a potential of the floating diffusion to be output to a signal line.

### Claim 7 (depends on 4)

The imaging device of claim 4, wherein the at least one shared transistor includes a select transistor positioned to selectively enable operation of an amplification transistor.

### Claim 8 (depends on 1)

The imaging device of claim 1, further comprising:
a plurality of transistors including first and second transfer transistors associated with the first and second photoelectric conversion units respectively, wherein the first and second transfer transistors are positioned to allow charge to be selectively transferred to a floating diffusion shared by the first and second photoelectric conversion units.

### Claim 9 (depends on 1)

The imaging device of claim 1, further comprising:
an element isolation region disposed between the first and second photoelectric conversion units.

### Claim 10 (depends on 1)

The imaging device of claim 1, further comprising:
a plurality of transistors; and
a vertical driving unit, wherein the vertical driving unit is configured to supply drive signals to drive the plurality of transistors.

### Claim 11 (depends on 1)

The imaging device of claim 1, further comprising:
a signal line, wherein the signal line is coupled to a select transistor; and
a column processing unit, wherein the column processing unit is coupled to the signal line, and wherein the column processing unit is configured to convert a signal from the at least one of the photoelectric conversion units to a digital signal.

### Claim 12 (depends on 11)

The imaging device of claim 11, wherein the column processing unit performs correlated double sampling of the signal.

### Claim 13 (depends on 1)

The imaging device of claim 1, wherein the semiconductor substrate includes a first side that is the light-receiving side and a second side, the imaging device further comprising:
a plurality of on-chip lenses arranged at the first side of the semiconductor substrate; and
a color filter disposed between the on-chip lenses and the first side of the semiconductor substrate, wherein the insulating film is disposed between the color filter and the first side of the semiconductor substrate.

### Claim 14 (depends on 13)

The imaging device of claim 13, further comprising:
a planarization film disposed between the color filter and the first side of the semiconductor substrate.

### Claim 15 (depends on 14)

The imaging device of claim 14, further comprising:
a film disposed between the insulating film and the light-receiving side of the semiconductor substrate.

### Claim 16 (depends on 15)

The imaging device of claim 15, wherein the film includes hafnium.

### Claim 17 (depends on 1)

The imaging device of claim 1, wherein the semiconductor substrate includes a first side that is the light-receiving side and a second side, the imaging device further comprising:
a metallic portion disposed adjacent to the first side of the semiconductor substrate, wherein the metallic portion forms a light-shielding layer disposed between a color filter and the first side of the semiconductor substrate.

### Claim 18 (depends on 17)

The imaging device of claim 17, wherein the light-shielding layer includes at least one of aluminum, tungsten, or copper.

### Claim 19 (depends on 1)

The imaging device of claim 1, further comprising:
a support substrate disposed at a side of the semiconductor substrate opposite to the light-receiving side.

### Claim 20 (depends on 1)

The imaging device of claim 1, further comprising:
a wiring layer including a plurality of signal lines and disposed at a side of the semiconductor substrate opposite to the light-receiving side.