Semiconductor device, and manufacturing method thereof
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Jun Koyama, Hideaki Kuwabara, Saishi Fujikawa
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Abstract
In a display device such as a liquid crystal display device, a large-sized display screen is realized under low power consumption. A surface of a source wiring line of a pixel portion employed in an active matrix type liquid crystal display device is processed by way of a plating process operation so as to lower a resistance value of this source wiring line. The source wiring line of the pixel portion is manufactured at a step different from a step for manufacturing a source wiring line of a drive circuit portion. Further, electrodes of a terminal portion are processed by a plating process operation so as to reduce a resistance value thereof.
Claims8
(canceled)
A semiconductor device comprising:
- a first conductive layer;
- a first insulating layer over the first conductive layer;
- a semiconductor layer over the first insulating layer;
- a second conductive layer;
- a second insulating layer over the second conductive layer and the first insulating layer;
- a third conductive layer over the second insulating layer;
- a fourth conductive layer over the second insulating layer;
- and
- a gate wiring over the second insulating layer,
- wherein the semiconductor layer is included in a transistor,
- wherein the semiconductor layer includes a first region between the first conductive layer and the gate wiring,
- wherein the semiconductor layer includes a second region between the first conductive layer and the gate wiring,
- wherein the semiconductor layer includes a third region which does not overlap with the first conductive layer,
- wherein the semiconductor layer includes a fourth region,
- wherein the semiconductor layer includes a fifth region,
- wherein the fourth region is electrically connected to the third region through the first region,
- wherein the third region is electrically connected to the fifth region through the second region,
- wherein the second insulating layer includes a first contact hole, a second contact hole, a third contact hole, and a fourth contact hole,
- wherein the third conductive layer is electrically connected to the fourth region through the first contact hole,
- wherein the third conductive layer is electrically connected to the second conductive layer through the second contact hole,
- wherein the fourth conductive layer is electrically connected to the fifth region through the third contact hole, and
- wherein the gate wiring is electrically connected to the first conductive layer through the fourth contact hole.
A semiconductor device comprising:
- a transistor including a semiconductor layer,
- wherein the semiconductor layer includes a region interposed between a first conductive layer and a gate wiring, and
- wherein the first conductive layer is electrically connected to the gate wiring.
A semiconductor device comprising:
- a first conductive layer;
- a first insulating layer over the first conductive layer;
- a semiconductor layer over the first insulating layer;
- a second insulating layer over the semiconductor layer;
- and
- a gate wiring over the second insulating layer,
- wherein the gate wiring is electrically connected to the first conductive layer through a contact hole of the second insulating layer, and
- wherein the semiconductor layer includes a first region between the first conductive layer and the gate wiring.
Dependencies are inferred from the claim text.