Voltage distribution in transistor stacks using non-uniform transistor dimensions

A radio-frequency module comprising:

• a first field-effect transistor having a first plurality of source fingers, a first plurality of drain fingers, and a first plurality of gate fingers including a gate finger disposed between each adjacent pair of source and drain fingers of the first plurality of drain fingers and the first plurality of source fingers, each of the first plurality of source fingers being separated from an adjacent drain finger of the first plurality of drain fingers by a first drain-to-source distance;
• and
• a second field-effect transistor in a series connection with the first field-effect transistor, the second field-effect transistor having a second plurality of source fingers, a second plurality of drain fingers, and a second plurality of gate fingers including a gate finger disposed between each adjacent pair of source and drain fingers of the second plurality of drain fingers and the second plurality of source fingers, each of the second plurality of source fingers being separated from an adjacent drain finger of the second plurality of drain fingers by a second drain-to-source distance that is different than the first drain-to-source distance.

A method of fabricating a transistor stack comprising:

• forming a first field-effect transistor on a semiconductor substrate, the first field-effect transistor having a first drain-to-source spacing;
• and
• forming a second field-effect transistor on the semiconductor substrate in a series connection with the first field-effect transistor, the second field-effect transistor having a second drain-to-source spacing that is greater than the first drain-to-source spacing.