Semiconductor device and manufacturing method of the same
AssigneeRenesas Electronics Corporation
InventorsTakaaki TSUNOMURA, Yoshiki YAMAMOTO, Masaaki SHINOHARA, Toshiaki IWAMATSU, Hidekazu ODA
Life of this patent
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Abstract
On a semiconductor substrate having an SOI region and a bulk silicon region formed on its upper surface, epitaxial layers are formed in source and drain regions of a MOSFET formed in the SOI region, and no epitaxial layer is formed in source and drain regions of a MOSFET formed in the bulk silicon region. By covering the end portions of the epitaxial layers with silicon nitride films, even when diffusion layers are formed by implanting ions from above the epitaxial layers, it is possible to prevent the impurity ions from being implanted down to a lower surface of a silicon layer.
Claims14
1-16. (canceled)
A semiconductor device comprising:
- a first field effect transistor formed in a first region of a semiconductor substrate,
- wherein, in the first region, a first insulating film is formed on the semiconductor substrate, and a semiconductor layer is formed on the first insulating film,
- wherein the first field effect transistor has:
- a first gate electrode formed on the semiconductor layer via a first gate insulating film;
- a second insulating film formed on a side surface of the first gate electrode, and formed on the semiconductor layer;
- an epitaxial layer formed on the semiconductor layer exposed from the second insulating film, and having an end portion whose thickness is thinner than a thickness of a central portion of the epitaxial layer;
- and
- a third insulating film formed on the side surface of the first gate electrode via the second insulating film such that the third insulating film covers an upper surface of the epitaxial layer in the end portion,
- wherein a first extension region, which serves as a part of one of a source region of the first field effect transistor and a drain region of the first field effect transistor, is formed in a first portion of the semiconductor layer, which is covered with the second insulating film and the third insulating film,
- wherein a first diffusion layer, which serves as a part of one of the source region of the first field effect transistor and the drain region of the first field effect transistor, is formed in a second portion of the semiconductor layer, which is not covered with the second insulating film and the third insulating film, and
- wherein an impurity concentration of the first diffusion layer is higher than an impurity concentration of the first extension region.
Dependencies are inferred from the claim text.