Semiconductor memory device and method for manufacturing the same

A method for manufacturing a semiconductor memory device, comprising:

• forming a stacked film on a surface of a base body, the stacked film including a plurality of first films and a second film, the plurality of first films being arranged in a first direction, the first direction being perpendicular to the surface, the second film being provided between the plurality of first films;
• forming a plurality of first memory portions and a plurality of second memory portions, the plurality of first memory portions extending in the first direction through a first region of the stacked film and being arranged at a first pitch in a second direction crossing the first direction, the plurality of second memory portions extending in the first direction through a second region of the stacked film and being arranged at the first pitch in the second direction, the second region being arranged with the first region in the second direction, a distance along the second direction between a first center in the second direction of one of the plurality of first memory portions and a second center in the second direction of one of the plurality of second memory portions being longer than the first pitch and shorter than 2 times the first pitch;
• forming a hole in the stacked film and removing the plurality of first films via the hole;
• and
• introducing a material into a space formed where the plurality of first films is removed, the material being used to form a conductive layer.