Uv-erasable memory device with uv transmitting window and fabrication method thereof
AssigneeeMemory Technology Inc.
InventorsTing-Ting Su, Kuan-Hsun Chen, Ming-Shan Lo
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Abstract
A UV-erasable memory device with a UV transmitting window is disclosed. The UV-erasable memory device includes a substrate, two serially connected PMOS transistors on the substrate; an interlayer dielectric (ILD) layer covering the two PMOS transistors, a first intermetal dielectric (IMD) layer on the ILD layer, an intermediate layer on the first IMD layer, a UV transmitting window in the intermediate layer, and a second intermetal dielectric (IMD) layer on the first IMD layer and in the UV transmitting window.
Claims20
A method for fabricating a UV-erasable memory device with a UV transmitting window, comprising:
- providing a substrate;
- forming two serially connected MOS transistors on said substrate;
- covering said two MOS transistors with an interlayer dielectric (ILD) layer;
- depositing a first intermetal dielectric (IMD) layer on said ILD layer;
- depositing an intermediate layer on said first IMD layer;
- forming a UV transmitting window in said intermediate layer;
- and
- depositing a second intermetal dielectric (IMD) layer on said first IMD layer and into said UV transmitting window.
A UV-erasable memory device with a UV transmitting window, comprising:
- a substrate;
- two serially connected PMOS transistors on said substrate;
- an interlayer dielectric (ILD) layer covering said two PMOS transistors;
- a first intermetal dielectric (IMD) layer on said ILD layer;
- an intermediate layer on said first IMD layer;
- a UV transmitting window in said intermediate layer;
- and
- a second intermetal dielectric (IMD) layer on said first IMD layer and in said UV transmitting window.
Dependencies are inferred from the claim text.